The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

The present disclosure provides bond pad structures, boning ring structure; and MEMS device packaging methods. An exemplary bonding pad structure includes a plurality of first metal blocks made of a first metal material; and a plurality of second metal blocks made of a second metal material. The plurality of first metal blocks are used to prevent the squeezing out and extending of the plurality of second metal blocks. On at least one equal dividing plane of the bonding pad structure, the first metal material is shown at least one time; and the second metal material is shown at least one time.

A microelectromechanical transducer includes: a semiconductor body, having a first surface and a second surface opposite to one another; a first structural body, coupled to the first surface of the semiconductor body; a first sealed cavity between the semiconductor body and the first structural body; and an active area housed in the first sealed cavity, including at least two trenches and a sensor element between the trenches. The trenches extend along a vertical direction from the first surface towards the second surface of the semiconductor body.

A bonded structure can include a first element having a first interface feature and a second element having a second interface feature. The first interface feature can be bonded to the second interface feature to define an interface structure. A conductive trace can be disposed in or on the second element. A bond pad can be provided at an upper surface of the first element and in electrical communication with the conductive trace. An integrated device can be coupled to or formed with the first element or the second element.

According to an example aspect of the present invention, there is provided a wafer level package for a device, the package comprising: a first substrate and a second substrate, a sealing structure comprising a seal ring and a bonding layer between the first substrate and the second substrate, and a lateral electrical connection line on a surface of the first substrate, which lateral electrical connection line extends through the seal ring for creating an electrical connection between the device inside the package and an electrical circuit outside the package.

A microelectromechanical microphone including a microphone unit made from a first substrate, the microphone unit including a movable element capable of being displaced under the effect of a pressure difference and a device for measuring the displacement of the movable element, a cover made from a second substrate, the cover having a first recess, first device for electrically connecting the measurement device to a control unit, the microphone unit and the cover delimiting between them a vacuum space housing the measurement device and a first cavity, from the first recess, partly closed by the movable element, the vacuum space and the first cavity being insulated in a sealed manner from each other, the microphone including a device for mechanically transmitting the displacement of the movable element to the measurement device and a sealed insulation element through which the transmission device passes.

A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

A stacked chip package is provided. The stacked chip package includes a first substrate having a first side and a second side opposite thereto. The first substrate includes a recess therein. The recess adjoins a side edge of the first substrate. A plurality of redistribution layers is disposed on the first substrate and extends onto the bottom of the recess. A second substrate is disposed on the first side of the first substrate. A plurality of bonding wires is correspondingly disposed on the redistribution layers in the recess, and extends onto the second substrate. A device substrate is disposed on the second side of the first substrate. A method of forming the stacked chip package is also provided.

The present disclosure provides bond pad structures, boning ring structure; and MEMS device packaging methods. An exemplary bonding pad structure includes a plurality of first metal blocks made of a first metal material; and a plurality of second metal blocks made of a second metal material. The plurality of first metal blocks are used to prevent the squeezing out and extending of the plurality of second metal blocks. On at least one equal dividing plane of the bonding pad structure, the first metal material is shown at least one time; and the second metal material is shown at least one time.

A method includes forming a bumpstop from a first intermetal dielectric (IMD) layer and forming a via within the first IMD, wherein the first IMD is disposed over a first polysilicon layer, and wherein the first polysilicon layer is disposed over another IMD layer that is disposed over a substrate. The method further includes depositing a second polysilicon layer over the bumpstop and further over the via to connect to the first polysilicon layer. A standoff is formed over a first portion of the second polysilicon layer, and wherein a second portion of the second polysilicon layer is exposed. The method includes depositing a bond layer over the standoff.