B81C1/00039

MEMS MICROPHONE, METHOD OF MANUFACTURING THE SAME AND MEMS MICROPHONE PACKAGE INCLUDING THE SAME
20190342670 · 2019-11-07 ·

A MEMS microphone includes a cavity extending portion that increases the size of the cavity. The cavity extending portion can be sloped or stepped in order to create a desired profile of the extended cavity shape. Thus, the volume of the cavity may be increased in order to decrease the compliance and to increase a Signal to Noise Ratio.

Microelectromechanical system (MEMS) structure and method of formation
11953674 · 2024-04-09 · ·

A microelectromechanical system (MEMS) structure includes at least first and second metal vias. Each of the first and second metal vias includes a respective planar metal layer having a first thickness and a respective post formed from the planar metal layer. The post has a sidewall, and the sidewall has a second thickness greater than 14% of the first thickness.

Micro-device structures with etch holes
11952266 · 2024-04-09 · ·

A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.

MEMS Devices and Methods of Forming the Same

A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

MICROELECTROMECHANICAL SYSTEM (MEMS) STRUCTURE AND METHOD OF FORMATION
20190204586 · 2019-07-04 ·

A microelectromechanical system (MEMS) structure includes at least first and second metal vias. Each of the first and second metal vias includes a respective planar metal layer having a first thickness and a respective post formed from the planar metal layer. The post has a sidewall, and the sidewall has a second thickness greater than 14% of the first thickness.

MICRO-DEVICE STRUCTURES WITH ETCH HOLES
20240199413 · 2024-06-20 ·

A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be 10 any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.

Methods of forming micro-electro-mechanical devices including a conductive feature extending through an escort ring

A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

MEMS MICROPHONE AND METHOD OF MANUFACTURING THE SAME
20190082269 · 2019-03-14 ·

A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate, the back plate having a plurality of acoustic holes, a diaphragm interposed between the substrate and the back plate, and being spaced apart from the substrate and the back plate, the diaphragm covering the cavity, forming an air gap between the back plate, and sensing an acoustic pressure to generate a displacement, and a plurality of anchors extending from an end portion of the diaphragm and along a circumference of the diaphragm, each of the anchors having a serpentine shape in a plan view and including a bottom portion making contact with an upper surface of the substrate to support the diaphragm from the substrate. Thus, the MEMS microphone may have adjustable area of the slit.

DEVICE ARRANGEMENT
20180312399 · 2018-11-01 ·

Various embodiments may provide a device arrangement. The device arrangement may include a substrate including a conductive layer. The device arrangement may further include a microelectromechanical systems (MEMS) device monolithically integrated with the substrate, wherein the MEMS device may be electrically coupled to the conductive layer. A cavity may be defined through the conductive layer for acoustically isolating the MEMS device MEMS device from the substrate. At least one anchor structure may be defined by the conductive layer to support the MEMS device.

ANCHOR STRUCTURE
20250033951 · 2025-01-30 ·

A semiconductor device is disclosed having one or more anchors that is configured to support a moving mass. The one or more anchors are formed in or on the semiconductor substrate. The one or more anchors are attached to the semiconductor substrate. An intermediate layer is formed overlying the semiconductor substrate. A device layer is formed overlying the intermediate layer. The device layer, the intermediate layer, and the semiconductor substrate are single crystal. The moving mass is formed in the device layer. The at least one anchor comprises a dielectric material coupled to the semiconductor substrate. The moving mass couples to the at least one anchor. Portions of the intermediate layer are removed to free the moving mass in relation the semiconductor substrate.