Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.

The present disclosure relates to a MEMS package having a cap substrate with different trench depths, and a method of fabricating the MEMS package. In some embodiments, a first trench in a first device region and a scribe trench in a scribe line region are formed at a front side of a cap substrate. Then, a hard mask is formed and patterned over the cap substrate. Then, with the hard mask in place, an etch is performed to the cap substrate such that an uncovered portion of a bottom surface of the first trench is recessed while a covered portion of the bottom surface of the first trench is non-altered to form a stopper within the first trench. Then, the front side of the cap substrate is bonded to a device substrate, enclosing the first trench over a first MEMS device.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

An illustrate method (and device) includes etching a cavity in a first substrate (e.g., a semiconductor wafer), forming a first metal layer on a first surface of the first substrate and in the cavity, and forming a second metal layer on a non-conductive structure (e.g., glass). The method also may include removing a portion of the second metal layer to form an iris to expose a portion of the non-conductive structure, forming a bond between the first metal layer and the second metal layer to thereby attach the non-conductive structure to the first substrate, sealing an interface between the non-conductive structure and the first substrate, and patterning an antenna on a surface of the non-conductive structure.

A MEMS microphone includes a substrate defining a cavity, a diaphragm being spaced apart from the substrate, covering the cavity, and being configured to generate a displacement thereof in response to an applied acoustic pressure, an anchor extending from an end portion of the diaphragm, the anchor including a lower surface in contact with an upper surface of the substrate to support the diaphragm, a back plate disposed over the diaphragm, the back plate being spaced apart from the diaphragm such that an air gap is maintained between the back plate and the diaphragm, and defining a plurality of acoustic holes and an upper insulation layer provided on the substrate, covering the back plate, and holding the back plate to space the back plate from the diaphragm, the upper insulation layer having a flat plate shape to prevent sagging of the back plate.

A neural lattice device includes a substrate having formed therein one or more wells and one or more supply ducts. A channel network includes one or more channels configured to establish fluid communication among the at least one well and the at least one supply duct. A reservoir is coupled to the substrate and configured to hold a fluid, and a cover is disposed against an upper surface of the substrate and configured to hermetically seal the wells, the supply ducts and the channel network.

A production method for a micromechanical component for a sensor or microphone device. The method includes: patterning a plurality of first trenches through a substrate surface of a monocrystalline substrate made of at least one semiconductor material using anisotropic etching, covering the lateral walls of the plurality of first trenches with a passivation layer, while bottom areas of the plurality of first trenches are kept free or are freed of the passivation layer, etching at least one first cavity, into which the plurality of first trenches opens, into the monocrystalline substrate using an isotropic etching method, in which an etching medium of the isotropic etching method is conducted through the plurality of first trenches, and by covering the plurality of first trenches by epitaxially growing a monocrystalline sealing layer on the substrate surface of the monocrystalline substrate made of the at least one identical semiconductor material as the monocrystalline substrate.

A process for manufacturing a microelectromechanical device envisages: providing a wafer of semiconductor material; forming a buried cavity, completely contained within the wafer, and a structural layer formed by a surface portion of the wafer and suspended over the buried cavity; forming first trenches through the structural layer as far as the buried cavity, which define the suspended structure in the structural layer; filling the first trenches and the buried cavity with sacrificial material; forming a closing structure above the structural layer; removing the sacrificial material from the first trenches and from the buried cavity to release the suspended structure, the suspended structure being isolated and buried within the wafer in a buried environment formed by the first trenches and by the buried cavity.

Airtightness in a cavity of an inertial sensor (acceleration sensor) is increased to achieve high sensitivity. In the acceleration sensor having movable electrodes VE1, VE2 and fixed electrodes FE1, FE2, the fixed electrodes are formed by portions surrounded by a through hole TH1 provided in a cap layer CL, and the through hole is filled with an insulating film IF1 and polysilicon P and has a wide portion (WP). The wide portion has a gap SP that is not filled with the insulating film IF1 and the polysilicon P, and the gap SP is filled with the interlayer insulating film ID. With such a configuration, degassing can be exhausted through the gap (airway) SP in a pressure reducing step.