A method for forming a sealed cavity includes bonding a non-conductive structure to a first substrate to form a non-conductive aperture into the first substrate. On a surface of the non-conductive structure opposite the first substrate, the method includes depositing a first metal layer. The method further includes patterning a first iris in the first metal layer, depositing a first dielectric layer on a surface of the first metal layer opposite the non-conductive structure, and patterning an antenna on a surface of the first dielectric layer opposite the first metal layer. The method also includes creating a cavity in the first substrate, depositing a second metal layer on a surface of the cavity, patterning a second iris in the second metal layer, and bonding a second substrate to a surface of the first substrate opposite the non-conductive structure to thereby seal the cavity.

A three-dimensional (3D) structure for handling fluids, a fluid handling device containing the 3D structure, and a method of making the 3D structure. The 3D structure includes a composite photoresist material that includes: (a) a first layer having a first photoacid generator therein having at least a first radiation exposure wavelength and (b) at least a second layer having a second photoacid generator therein having a second radiation exposure wavelength that is different from the first radiation exposure wavelength, and wherein the composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material.

A three-dimensional (3D) structure for handling fluids, a fluid handling device containing the 3D structure, and a method of making the 3D structure. The method includes providing a composite photoresist material that includes: (a) a first layer devoid of a hydrophobicity agent and (b) at least a second layer comprising the hydrophobicity agent. The composite photoresist material is devoid of an adhesion promotion layer between layers of the composite photoresist material.

A manufacturing method of a MEMS sensor includes a step of, by irradiating a first hole formed in a second layer on a semiconductor substrate with a focused ion beam for a first predetermined time, forming a first sealing film, which seals the first hole, on the first hole, and a step of, by irradiating a second hole formed in the second layer with a focused ion beam for a second predetermined time, forming a second sealing film, which seals the second hole, on the second hole. At this time, each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step of forming the first sealing film and the step of forming the second sealing film are performed repeatedly.

A manufacturing method of a MEMS sensor includes a step of, by irradiating a first hole formed in a second layer on a semiconductor substrate with a focused ion beam for a first predetermined time, forming a first sealing film, which seals the first hole, on the first hole, and a step of, by irradiating a second hole formed in the second layer with a focused ion beam for a second predetermined time, forming a second sealing film, which seals the second hole, on the second hole. At this time, each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step of forming the first sealing film and the step of forming the second sealing film are performed repeatedly.

A method for forming a semiconductor structure includes following operations. An interconnect structure is formed over a substrate. The interconnect structure includes a top conductive layer. A dielectric structure is formed over the interconnect structure. The dielectric structure is patterned to simultaneously form a cavity and a protrusion in the cavity. A MEMS substrate is bonded to the dielectric structure to seal the cavity. The protrusion is separated from the MEMS substrate.

A method for producing MEMS components comprises generating a carrier having a plurality of recesses. An adhesive structure is arranged on the carrier and in the recesses. A semiconductor wafer is generated, which has a plurality of MEMS structures arranged at the first main surface of the semiconductor wafer. The adhesive structure is attached to the first main surface of the semiconductor wafer, with the recesses being arranged above the MEMS structures and the adhesive structure not contacting the MEMS structures. The semiconductor wafer is singulated into a plurality of MEMS components by applying a mechanical dicing process.

A method for manufacturing a MEMS device includes a hole forming step of forming a plurality of holes concaved from a principal surface in a substrate material including a semiconductor, a connecting-hollow-portion forming step of forming a connecting hollow portion that connects the plurality of holes together, and a movable-portion forming step of, by partially moving the semiconductor of the substrate material so as to close at least one part of the plurality of holes, forming a hollow portion that exists inside the substrate material and a movable portion that coincides with the hollow portion when viewed in a thickness direction of the substrate material.

An object of the invention is to provide a MEMS device that is easy to set a cavity inner pressure to a desired value by utilizing normally-used MEMS device manufacturing processes and process materials without increase in the number of processes of manufacturing the MEMS device. In order to solve the problem, as a typical MEMS device of the present invention, a MEMS device having a cavity includes an insulating film containing hydrogen in vicinity of the cavity and a hydrogen barrier film covering the insulating film.

A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.