Patent classifications
B81C1/00095
EXTERNALLY GROUNDED PRINTED CIRCUIT BOARD
According to some embodiments, the present disclosure is directed to a printed circuit board for a microphone assembly that includes a top layer structured for a MEMS transducer to be mounted thereon, a bottom layer, at least one edge, a ground plane, and a conductor electrically connected to the ground plane and the bottom layer. The MEMS transducer includes a transducer substrate, a back plate and a diaphragm. The conductor extends vertically from the top layer to the bottom layer of the printed circuit board, and horizontally along a portion of a length of at least one edge of the printed circuit board. The printed circuit board includes two short edges and two long edges, and the conductor is connected to at least one of the four edges.
Electrical test structure and method for monitoring deep trench impedance to substrate
A microelectronic device includes a deep trench test structure in semiconductor material of a substrate. The deep trench test structure has pad trench segments with a liner of electrically non-conductive material and a trench fill material on the liner, extending to tops of the pad trench segments. The pad trench segments extend across a probe pad region; at least 20 microns in every lateral direction. The trench fill material at the top of the pad trench segments occupies at least 25 percent of the probe pad region. The liner may electrically isolate the trench fill material from the semiconductor material, or the deep trench test structure may include a contact trench segment wherein the trench fill material contacts the semiconductor material. The deep trench test structure may be probed on the pad trench segments to measure an impedance between the trench fill material and the semiconductor material.
A MICROFLUIDIC DEVICE WITH INTEGRATED MICRO-STRUCTURED ELECTRODES AND METHODS THEREOF
The present disclosure provides a microfluidic device comprising a set of micro-structured electrodes. The electrodes are made of a fusible alloy such as Field's Metal and are patterned on a layer of PDMS. The molten fusible alloy is poured over the patterned PDMA layer and a suction force is applied to ensure uniformity of flow of the molten metal. A second layer comprising a flow channel orthogonal to the direction of the micro-structured electrodes is disposed under the first layer to form the microfluidic device. The device shows enhanced sensitivity to RBC detection at high frequencies that are also bio-compatible (above 2 MHz). Multiple layers of the micro-structures electrodes can be sandwiched between layers of flow channels to provide a 3D microfluidic device.
MEMS component having low-resistance wiring and method for manufacturing it
A MEMS component including a first substrate having at least one first insulating layer and a first metallic coating on a first side; and including a second substrate having at least one second insulating layer and a second metallic coating on a second side, the second substrate including a micromechanical functional element, which is connected electroconductively to the second metallic layer. The first side and the second side are positioned on each other, the first insulating layer and the second insulating layer being interconnected, and the first metallic coating and the second metallic coating being interconnected. A method for manufacturing a MEMS component is also described.
Planar electrode arrays and fabrication methods thereof
The present invention relates to a method of fabricating an electrode array, in which an underlying handle wafer is removed to provide a planar device having the electrode array. Also provided are wafers including a plurality of planar devices having an electrode array, as well as sensors including such an electrode array.
Through Silicon Via and Redistribution Layer
A semiconductor device, which comprises: a silicon substrate having a front surface and a back surface; a metal layer located on said front surface; a through silicon via (TSV) extending through said silicon substrate from said back surface to said front surface, wherein said TSV is connected at one end to said metal layer; and a redistribution layer (RDL), wherein said RDL is embedded in said silicon substrate.
METHOD OF MAKING OHMIC CONTACT ON LOW DOPED BULK SILICON FOR OPTICAL ALIGNMENT
Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The method includes bonding a MEMS substrate to a carrier substrate. The epitaxial layer is formed over the MEMS substrate, where the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts is formed over the epitaxial layer.
METHOD OF MAKING OHMIC CONTACT ON LOW DOPED BULK SILICON FOR OPTICAL ALIGNMENT
Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The MEMS substrate comprises a moveable element arranged over a carrier substrate. The epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts overlies the epitaxial layer. A first subset of the plurality of contacts overlies the moveable element. The plurality of contacts respectively has an ohmic contact with the epitaxial layer.
3D stack configuration for 6-axis motion sensor
A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.
STRUCTURE FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES TO CONTROL PRESSURE AT HIGH TEMPERATURE
Various embodiments of the present disclosure are directed towards an integrated chip including a capping structure over a device substrate. The device substrate includes a first microelectromechanical systems (MEMS) device and a second MEMS device laterally offset from the first MEMS device. The capping structure includes a first cavity overlying the first MEMS device and a second cavity overlying the second MEMS device. The first cavity has a first gas pressure and the second cavity has a second gas pressure different from the first cavity. An outgas layer abutting the first cavity. The outgas layer includes an outgas material having an outgas species. The outgas material is amorphous.