Aspects of this disclosure relate to a capacitive micromachined ultrasonic transducer (CMUT) with a contoured electrode. In certain embodiments, the CMUT has a contoured electrode. The electrode may be non-planar to correspond to a deflected shape of the outer plate. A change in distance between the electrode and the plate after deflection may be greater than a minimum threshold across the width of the CMUT.

A MEMS (microelectromechanical systems) structure comprises a MEMS wafer. A MEMS wafer includes a cap with cavities bonded to a structural layer through a dielectric layer disposed between the cap and the structural layer. Unique configurations of MEMS devices and methods of providing such are set forth which provide for, in part, creating rounded, scalloped or chamfered MEMS profiles by shaping the etch mask photoresist reflow, by using a multi-step deep reactive ion etch (DRIE) with different etch characteristics, or by etching after DRIE.

The invention relates to a silicon-based component with at least one reduced contact surface which, formed from a method combining at least one oblique side wall etching step with a “Bosch” etch of vertical side walls, improves, in particular, the tribology of components formed by micromachining a silicon-based wafer.

The present invention provides a method for preparing a micro-cavity array surface with an inclined smooth bottom surface based on an air molding method. The method includes: preparing a micro-cavity array surface; preparing an auxiliary microstructure polymer template, and performing plasma treatment on the auxiliary microstructure polymer template; uniformly spreading a layer of a liquid polymer film to be formed on the auxiliary microstructure polymer template subjected to the plasma treatment; placing a gap bead in an empty position on the micro-cavity array surface; placing the auxiliary microstructure polymer template spread with the liquid polymer film on the gap bead on the micro-cavity array surface, maintaining this state, and feeding the auxiliary microstructure polymer template into a vacuum drying oven; and heating and solidifying the liquid polymer film, and separating the micro-cavity array surface to obtain the micro-cavity array surface with the inclined smooth bottom surface.

Aspects of this disclosure relate to driving a capacitive micromachined ultrasonic transducer (CMUT) with a pulse train of unipolar pulses. The CMUT may be electrically excited with a pulse train of unipolar pulses such that the CMUT operates in a continuous wave mode. In some embodiments, the CMUT may have a contoured electrode.

Aspects of this disclosure relate to driving a capacitive micromachined ultrasonic transducer (CMUT) with a pulse train of unipolar pulses. The CMUT may be electrically excited with a pulse train of unipolar pulses such that the CMUT operates in a continuous wave mode. In some embodiments, the CMUT may have a contoured electrode.

A method of manufacturing a semiconductor ICF target is described. On an n-type silicon wafer a plurality of hard mask layers are etched to a desired via pattern. Then isotropically etching hemispherical cavities, lithographically patterning the hard mask layers, conformally depositing ablator/drive material(s) and shell layer material(s), inserting hollow silicon dioxide fuel spheres in the hemisphere cavities, thermally bonding a mating wafer with matching hemisphere cavities and etching in ethylene diamine-pryrocatechol-water mixture to selectively remove n-type silicon and liberate the spherical targets.

A method includes bonding a first surface of a first semiconductor substrate to a first surface of a second semiconductor substrate and forming a cavity in the first area of the first semiconductor substrate, where forming the cavity comprises: supplying a passivation gas mixture that deposits a passivation layer on a bottom surface and sidewalls of the cavity, where during deposition of the passivation layer, a deposition rate of the passivation layer on the bottom surface of the cavity is the same as a deposition rate of the passivation layer on sidewalls of the cavity; and etching the first area of the first semiconductor substrate using an etching gas, where the etching gas is supplied concurrently with the passivation gas mixture, etching the first area of the first semiconductor substrate comprises etching in a vertical direction at a greater rate than etching in a lateral direction.

Aspects of this disclosure relate to driving a capacitive micromachined ultrasonic transducer (CMUT) with a pulse train of unipolar pulses. The CMUT may be electrically excited with a pulse train of unipolar pulses such that the CMUT operates in a continuous wave mode. In some embodiments, the CMUT may have a contoured electrode.

The present invention provides a method for preparing a micro-cavity array surface with an inclined smooth bottom surface based on an air molding method. The method includes: preparing a micro-cavity array surface; preparing an auxiliary microstructure polymer template, and performing plasma treatment on the auxiliary microstructure polymer template; uniformly spreading a layer of a liquid polymer film to be formed on the auxiliary microstructure polymer template subjected to the plasma treatment; placing a gap bead in an empty position on the micro-cavity array surface; placing the auxiliary microstructure polymer template spread with the liquid polymer film on the gap bead on the micro-cavity array surface, maintaining this state, and feeding the auxiliary microstructure polymer template into a vacuum drying oven; and heating and solidifying the liquid polymer film, and separating the micro-cavity array surface to obtain the micro-cavity array surface with the inclined smooth bottom surface.