A microfabricated structure includes a deflectable membrane, a first clamping layer on a first surface of the deflectable membrane, a second clamping layer on a second surface of the deflectable membrane, a first perforated backplate on the first clamping layer, and a second perforated backplate on the second clamping layer, wherein the first clamping layer comprises a first tapered edge portion having a negative slope between the first perforated backplate and the deflectable membrane.

Method of manufacturing a micromechanical component intended to cooperate with another micromechanical component, the method comprising the steps of providing a substrate, forming a mould on said substrate, said mould defining sidewalls arranged to delimit said micromechanical component, providing particles on at least said sidewalls, depositing a metal in said mould so as to form said micromechanical component, and liberating said micromechanical component from said mould and removing said particles.

Provided are a method for preparing a microfluidic device, a microfluidic device and a microfluidic system. The method includes: providing a mold having a groove; injecting a liquid metal into the groove of the mold, and solidifying the liquid metal to obtain a solid metal; separating the solid metal from the mold; providing the solid metal with an electrode; providing a cladding layer on a surface of the solid metal provided with the electrode, such that the solid metal is wrapped by the cladding layer, and at least a part of the electrode extends outside the cladding layer, so as to obtain a preform; and fixing the preform in a substrate, melting the solid metal and extending at least a part of the electrode outside the substrate, to obtain the microfluidic device.

A microfabricated structure includes a deflectable membrane, a first clamping layer on a first surface of the deflectable membrane, a second clamping layer on a second surface of the deflectable membrane, a first perforated backplate on the first clamping layer, and a second perforated backplate on the second clamping layer, wherein the first clamping layer comprises a first tapered edge portion having a negative slope between the first perforated backplate and the deflectable membrane.

An ion generating device, a method for manufacturing an ion generating device, and an air conditioner are provided. The ion generating device may include a discharge electrode that generates ions, and a power supply that applies power to the discharge electrode. The discharge electrode may include a support formed of a conductor, and a discharge pin formed to protrude from a surface of the support and having a tip. The discharge pin may include nickel (Ni).

A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.

A nano-structure includes an outer area at an edge of the nano-structure. A width of the outer area defined by a distance from the edge of the nano-structure is less than 100 m. A depth of the nano-structure in the outer area changes gradually between 0% and at least 50% of a maximum depth of the nano-structure. A method includes forming an etch mask on a substrate and etching the substrate with the etch mask using an ion beam to form a nano-structure in the substrate. The etch mask includes an outer area near an edge of the etch mask. A width of the outer area defined by a distance from the edge of the etch mask is less than 100 m. A duty cycle of the etch mask in the outer area changes gradually between at least 10% and at least 90%.

A nano-structure includes an outer area at an edge of the nano-structure. A width of the outer area defined by a distance from the edge of the nano-structure is less than 100 m. A depth of the nano-structure in the outer area changes gradually between 0% and at least 50% of a maximum depth of the nano-structure. A method includes forming an etch mask on a substrate and etching the substrate with the etch mask using an ion beam to form a nano-structure in the substrate. The etch mask includes an outer area near an edge of the etch mask. A width of the outer area defined by a distance from the edge of the etch mask is less than 100 m. A duty cycle of the etch mask in the outer area changes gradually between at least 10% and at least 90%.

A method of fabricating a capacitive micromachined ultrasonic transducer (CMUT) according to one aspect of the present invention may include forming, on a semiconductor substrate, a first region implanted with impurity ions at a first average concentration and a second region implanted with no impurity ions or implanted with the impurity ions at a second average concentration lower than the first average concentration, forming an insulating layer by oxidizing the semiconductor substrate wherein the insulating layer includes a first oxide layer having a first thickness on at least a part of the first region and a second oxide layer having a second thickness smaller than the first thickness on at least a part of the second region, and forming a membrane layer on the insulating layer such that a gap is defined between the second oxide layer and the membrane layer.

A method for manufacturing a semiconductor device includes providing a semiconductor structure including a first electrode layer, forming a sacrificial layer on the first electrode layer, the sacrificial layer including a recess having a pointed bottom defining a depth, forming a second electrode layer on the sacrificial layer, the second electrode layer including a first opening exposing the recess, and forming a support layer filling the recess, the first opening, and on the second electrode layer. A portion of the support layer filling the recess forms a stopper having a height equal to the depth of the recess. The method also includes forming a second opening extending through the support layer and the second electrode layer and exposing a surface of the sacrificial layer, and removing a portion of the sacrificial layer to form a cavity.