In one approach, a method of fabricating radiation detection devices includes: forming a structural layer overlying a frontside of a substrate; forming a metallic layer overlying the structural layer; releasing each of a plurality of devices on the substrate by etching a backside of the substrate, wherein each device comprises a plate and legs attached to the plate, the legs comprising at least a portion of the metallic layer; and sealing each of the plurality of devices, the sealing comprising: attaching a transparent cavity cap to the frontside of the substrate; and attaching a radiation-transparent substrate to the backside of the substrate.

The present invention relates to a MEMS pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a MEMS pressure sensor die is provided. The pressure sensor die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.

An optical scanning device, which is a MEMS element, includes a first insulating layer, a first semiconductor layer, a second insulating layer, and a second semiconductor layer that are laminated in this order, a first doped region formed at an interface between the first insulating layer and the first semiconductor layer, a second doped region formed at an interface between the first semiconductor layer and the second insulating layer, and a first wiring portion and a second wiring portion disposed on the first insulating layer apart from each other. The first doped region and the second doped region are electrically connected in parallel between the first wiring portion and the second wiring portion.

A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.

An integrated circuit and the method to produce the integrated circuit comprising: a substrate (10); active devices (11); plurality of metal layers (17), wherein said metal layers are separated by dielectric layers (13) and connected to each other by plurality of vias (19); at least one micromechanical region (15) wherein some of the dielectric layers are removed leaving hollow spaces (23), thereby some of said metal and via layers form a micromechanical device in said micromechanical region, wherein said micromechanical device comprises at least one multi-layer structure (165) that is built of a plurality of metal layers and at least one via layer and said multi-layer structure is characterized by that at least two metal layers of said multi-layer structure are joined by at least one modified via (41).

A method and apparatus are provided to prevent or reduce stiction of a MEMS device. The MEMS device may include a protrusion extending from a surface of the MEMS device. During manufacture, the protrusion may be connected across an opening in the MEMS device to a sidewall of the substrate. Before manufacture of the MEMS device is completed, at least a portion of the protrusion connecting the MEMS device to the substrate may be removed. During operation, the protrusion may provide stiction prevention or reduction for the surface from which the first protrusion may extend. A plurality of protrusions may be formed along a plurality of surfaces for the MEMS device to prevent or reduce stiction along the corresponding surfaces. Protrusions may also be formed on devices surrounding or encapsulating the MEMS device to prevent or reduce stiction of the MEMS device to the surrounding or encapsulating devices.

A MEMS transducer for interacting with a volume flow of a fluid includes a substrate including a cavity, and an electromechanical transducer connected to the substrate in the cavity and including an element deformable along a lateral movement direction, wherein a deformation of the deformable element along the lateral movement direction and the volume flow of the fluid are causally related.

An integrated circuit and the method to produce the integrated circuit comprising: a substrate (10); active devices (11); plurality of metal layers (17), wherein said metal layers are separated by dielectric layers (13) and connected to each other by plurality of vias (19); at least one micromechanical region (15) wherein some of the dielectric layers are removed leaving hollow spaces (23), thereby some of said metal and via layers form a micromechanical device in said micromechanical region, wherein said micromechanical device comprises at least one multi-layer structure (165) that is built of a plurality of metal layers and at least one via layer and said multi-layer structure is characterised by that at least two metal layers of said multi-layer structure are joined by at least one modified via (41).

A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.

In one approach, a method of fabricating radiation detection devices includes: forming a structural layer overlying a frontside of a substrate; forming a metallic layer overlying the structural layer; releasing each of a plurality of devices on the substrate by etching a backside of the substrate, wherein each device comprises a plate and legs attached to the plate, the legs comprising at least a portion of the metallic layer; and sealing each of the plurality of devices, the sealing comprising: attaching a transparent cavity cap to the frontside of the substrate; and attaching a radiation-transparent substrate to the backside of the substrate.