A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of manufacturing a plurality of through-holes in a layer of first material by subjecting part of the layer of said first material to ion beam milling. For batch-wise production, the method comprises after a step of providing the layer of first material and before the step of ion beam milling, providing a second layer of a second material on the layer of first material, providing the second layer of the second material with a plurality of holes, the holes being provided at central locations of pits in the first layer, and subjecting the second layer of the second material to said step of ion beam milling at an angle using said second layer of the second material as a shadow mask.

Disclosed is a method for manufacturing a microcantilever having a predetermined thickness that includes forming a liquid synthetic resin for cantilevers to a thickness corresponding to the thickness of the microcantilever on an upper surface of a base block having an adhesive base and a non-adhesive base, and curing the liquid synthetic resin for cantilevers via a boundary between the adhesive base and the non-adhesive base, wherein the adhesive base has stronger adhesivity to the cured synthetic resin for cantilevers than the non-adhesive base.

A method includes depositing a silicon layer over a first oxide layer that overlays a first silicon substrate. The method further includes depositing a second oxide layer over the silicon layer to form a composite substrate. The composite substrate is bonded to a second silicon substrate to form a micro-electro-mechanical system (MEMS) substrate. Holes within the second silicon substrate are formed by reaching the second oxide layer of the composite substrate. The method further includes removing a portion of the second oxide layer through the holes to release MEMS features. The MEMS substrate may be bonded to a CMOS substrate.

Methods of chemically encoding high-resolution shapes in silicon nanowires during metal nanoparticle catalyzed vapor-liquid-solid growth or vapor-solid-solid growth are provided. In situ phosphorus or boron doping of the silicon nanowires can be controlled during the growth of the silicon nanowires such that high-resolution shapes can be etched along a growth axis on the silicon nanowires. Nanowires with an encoded morphology can have high-resolution shapes with a size resolution of about 1,000 nm to about 10 nm and comprise geometrical shapes, conical profiles, nanogaps and gratings.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.

Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

A scanning device includes a substrate, which is etched to define an array of two or more parallel rotating members and a gimbal surrounding the rotating members. First hinges connect the gimbal to the substrate and defining a first axis of rotation, about which the gimbal rotates relative to the substrate. Second hinges connect the rotating members to the support and defining respective second, mutually-parallel axes of rotation of the rotating members relative to the support, which are not parallel to the first axis.