The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode operable to directly contact a second fixed electrode upon an application of a voltage to a first fixed electrode, forming a second cantilevered electrode with an end that overlaps the first cantilevered electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Microelectromechanical systems (MEMS) switches are described. The MEMS switches can be actively opened and closed. The switch can include a beam coupled to an anchor on a substrate by one or more hinges. The beam, the hinges and the anchor may be made of the same material in some configurations. The switch can include electrodes, disposed on a surface of the substrate, for electrically controlling the orientation of the beam. The hinges may be thinner than the beam, resulting in the hinges being more flexible than the beam. In some configurations, the hinges are located within an opening in the beam. The hinges may extend in the same direction of the axis of rotation of the beam and/or in a direction perpendicular to the axis of rotation of the beam.

Described herein is a technique capable of forming a sacrificial film with a high wet etching rate to obtain a wet etching selectivity with respect to a movable electrode when manufacturing a cantilever structure sensor using MEMS (Micro-Electro-Mechanical Systems) technology. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) loading a substrate including a control electrode, a pedestal and a counter electrode formed thereon into a process chamber; and (b) forming a sacrificial film containing impurities on the control electrode, the pedestal and the counter electrode by supplying a first process gas in a non-plasma state containing the impurities and silicon to the process chamber through a first gas supply pipe together with supplying a second process gas in a plasma state containing oxygen to the process chamber through a second gas supply pipe.

A probe module includes a circuit board and at least one probe formed on a probe installation surface of the circuit board by a microelectromechanical manufacturing process and including a probe body and a probe tip. The probe body includes first and second end portions and a longitudinal portion having first and second surfaces facing toward opposite first and second directions. The probe tip extends from the probe body toward the first direction and is processed with a gradually narrowing shape by laser cutting. The first and/or second end portion has a supporting seat protruding from the second surface toward the second direction and connected to the probe installation surface, such that the longitudinal portion and the probe tip are suspended above the probe installation surface. The probe has a tiny pinpoint for detecting tiny electronic components, and its manufacturing method is time-saving and high in yield rate.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of manufacturing a semiconductor structure includes receiving a substrate, receiving a heater, receiving an electrode, and receiving a sensing material. The substrate have a first surface, a second surface opposite to the first surface and a plurality of vias extending from the second surface toward the first surface and filled with a conductive or semiconductive material and a first oxide layer, the first oxide layer surrounding the conductive or semiconductive material in the plurality of vias, and a second oxide layer disposed over the first surface and the second surface. The heater is disposed within a membrane over the first surface of the substrate and electrically connected with the substrate. The electrode is over the heater and the membrane; and the sensing material covers a portion of the electrode.