A physical quantity sensor includes a movable body, a support portion supporting the movable body through a connecting portion, and a substrate that is disposed so as to overlap the movable body in plan view and provided with a first fixed electrode and a second fixed electrode along a first direction orthogonal to a longitudinal direction of the connecting portion. In plan view, a dummy electrode that is disposed next to the first fixed electrode and is at the same potential as the movable body is provided on the substrate. The first fixed electrode and the dummy electrode includes a first electrode material layer provided on the substrate, and a second electrode material layer provided on the substrate and on the first electrode material layer. The second electrode material layer constituting the first fixed electrode and the second electrode material layer constituting the dummy electrode are provided between the first electrode material layer constituting the first fixed electrode and the first electrode material layer constituting the dummy electrode, in plan view. A distance between the second electrode material layer constituting the first fixed electrode and the second electrode material layer constituting the dummy electrode is smaller than a distance between the first electrode material layer constituting the first fixed electrode and the first electrode material layer constituting the dummy electrode, in plan view.

A micromechanical z-inertial sensor having a movable MEMS structure developed in a second function layer; first spring elements developed in a first function layer, and a first electrode developed in the first function layer, the first spring elements being connected to the movable MEMS structure and to a substrate, and the first function layer being situated below the second function layer; second spring elements developed in a third function layer, and a second electrode developed in the third function layer, the second spring elements being connected to the movable MEMS structure and to the substrate, and the third function layer being disposed above the second function layer; the movable MEMS structure being deflectable in the z-direction with the aid of the spring elements, and in a defined manner, not being deflectable in the x- and y-directions.

Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The method includes bonding a MEMS substrate to a carrier substrate. The epitaxial layer is formed over the MEMS substrate, where the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts is formed over the epitaxial layer.

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The MEMS substrate comprises a moveable element arranged over a carrier substrate. The epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts overlies the epitaxial layer. A first subset of the plurality of contacts overlies the moveable element. The plurality of contacts respectively has an ohmic contact with the epitaxial layer.

A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

A micromechanical component for a sensor and/or microphone device. The component has an adjustable first actuator electrode suspended on a regionally deformable first layer, a first stator electrode fastened so that a first measuring signal is able to be tapped with regard to a first voltage or capacitance applied between the first actuator electrode and the first stator electrode, and a second actuator electrode, so that a second measuring signal is able to be tapped with regard to a second voltage or capacitance applied between the second actuator electrode and the first stator electrode or between the second actuator electrode and the second stator electrode. The second actuator electrode is situated in an adjustable manner on a side of the first actuator electrode facing away from the first layer in that the second actuator electrode is suspended on the first actuator electrode and/or an at least regionally deformable second layer.

A two-layer optical beam steering device, system, method of utilization and method of fabrication are disclosed. The solid-state device enables beam steering in two dimensions with dramatically fewer control lines than prior devices. This renders the device more technically realizable, easier to control, and more affordable to manufacture. Because less data need be transferred to the device, the device is also able to operate at faster speeds.

A MEMS sound transducer element is operable in an audio and an ultrasonic range. The MEMS sound transducer element includes a first electrode structure, wherein a conductive material of the first electrode structure includes a plurality of electrically isolated electrode segments, and a second electrode structure spaced apart from the first electrode structure, wherein the first electrode structure and the second electrode structure are operable as an audio sound transducer. A first subset of the plurality of electrically isolated electrode segments of the first electrode structure is, in conjunction with the second electrode structure, operable as an ultrasonic or audio emitter, and a second subset of the plurality of the electrically isolated electrode segments of the first electrode structure is, in conjunction with the second electrode structure, operable as an ultrasonic or audio receiver.

Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.