A MEMS package includes a MEMS chip, a package substrate which the MEMS chip is adhered and a thin-film filter which is adhered to the package substrate or the MEMS chip. The thin-film filter includes a thin-film part having a film surface and a rear film surface arranged a rear side of the film surface, and a plurality of through holes being formed to penetrate the thin-film part from the film surface to the rear film surface. The through holes are formed in an adhesive region of the thin-film part. The adhesive region is adhered to the package substrate or the MEMS chip.

A device includes a substrate, a first electrode formed on the substrate and a structural layer formed on the substrate. The structural layer includes a movable mass and a fixed portion, the movable mass being suspended above the substrate and the first electrode being interposed between the substrate and the movable mass. A second electrode is spaced apart from an upper surface of the movable mass by a gap and an anchor couples the second electrode to the fixed portion of the structural layer. A method entails integrating formation of the second electrode into a wafer process flow in which the first electrode and the structural layer are formed.

A nanosheet MEMS sensor device and method are described for integrating the fabrication of nanosheet transistors (61) and MEMS sensors (62) in a single nanosheet process flow by forming separate nanosheet transistor and MEMS sensor stacks (12A-16A, 12B-16B) of alternating Si and SiGe layers which are selectively processed to form gate electrodes (49A-C) which replace the silicon germanium layers in the nanosheet transistor stack, to form silicon fixed electrodes using silicon layers (13B-2, 15B-2) on a first side of the MEMS sensor stack, and to form silicon cantilever electrodes using silicon layers (13B-1, 15B-1) on a second side of the MEMS sensor stack by forming a narrow trench opening (54) in the MEMS sensor stack to expose and remove remnant silicon germanium layers on the second side in the MEMS sensor stack.

The present invention discloses a micro-electro-mechanical system silicon on insulator (MEMS SOI) pressure sensor and a method for preparing the same. The pressure sensor includes a bulk silicon layer, a buried oxide layer, a substrate, a varistor, a passivation layer, and an electrode layer. The varistor is obtained by means of photolithography and ion implantation on a device layer of an SOI wafer. The passivation layer is SiO.sub.2 formed by means of annealing treatment on the SOI wafer. An annealing atmosphere is one of pure O.sub.2, a gas mixture of O.sub.2/H.sub.2O, a gas mixture of O.sub.2/NO, a gas mixture of O.sub.2/HCl, and a gas mixture of O.sub.2/CHF.sub.3. By means of the annealing treatment, the damage to a surface of the buried oxide layer as a result of over-etching during formation of the varistor by means of photolithography is eliminated and the unstability of the sensor caused by body and interface defects of the passivation layer and trapped charges thereof is resolved. A trench is formed at the buried oxide layer and the bulk silicon layer directly below the varistor, which helps overcome defects as a result of doped impurities entering the buried oxide layer below the varistor, and helps improve the sensitivity of the sensor.

A physical quantity sensor includes a movable body, a support portion supporting the movable body through a connecting portion, and a substrate that is disposed so as to overlap the movable body in plan view and provided with a first fixed electrode and a second fixed electrode along a first direction orthogonal to a longitudinal direction of the connecting portion. In plan view, a dummy electrode that is disposed next to the first fixed electrode and is at the same potential as the movable body is provided on the substrate. The first fixed electrode and the dummy electrode includes a first electrode material layer provided on the substrate, and a second electrode material layer provided on the substrate and on the first electrode material layer. The second electrode material layer constituting the first fixed electrode and the second electrode material layer constituting the dummy electrode are provided between the first electrode material layer constituting the first fixed electrode and the first electrode material layer constituting the dummy electrode, in plan view. A distance between the second electrode material layer constituting the first fixed electrode and the second electrode material layer constituting the dummy electrode is smaller than a distance between the first electrode material layer constituting the first fixed electrode and the first electrode material layer constituting the dummy electrode, in plan view.

Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

A semiconductor structure includes a substrate, a sensing device disposed over the substrate and including a plurality of protruding members protruded from the sensing device; a sensing structure disposed adjacent to the sensing device and including a plurality of sensing electrodes protruded from the sensing structure towards the sensing device; and an actuating structure disposed adjacent to the sensing device and configured to provide an electrostatic force on the sensing device based on a feedback from the sensing structure. Further, a method of manufacturing the semiconductor structure is also disclosed.

A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method comprises forming a MEMS layer, wherein the forming comprises fusion bonding a handle layer with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius.

An electrostatic transducer includes a substrate oriented in a plane, a fixed electrode supported by the substrate, and a moveable electrode supported by the substrate, spaced from the fixed electrode in a first direction parallel to the plane, and configured for movement in a second direction transverse to the plane, such that an extent to which the fixed and moveable electrodes overlap changes during the movement. The fixed and moveable electrodes comprise one or more of a plurality of conductive layers, the plurality of conductive layers including at least three layers. The fixed electrode includes a stacked arrangement of two or more spaced apart conductive layers of the plurality of conductive layers.

Disclosed is a micro pressure sensor including a plurality of modules that are operative over different ranges of pressure. The modules include a stack of at least two module layers, each module layer including a module body having walls that define a compartment and with the defined compartment partitioned into at least two sub-compartments, a port for fluid ingress or egress disposed in a first wall of the body, with remaining walls of the body being solid walls, a membrane affixed to a first surface of the module body covering the compartment, and an electrode affixed over a surface of the membrane.