B81C1/00166

MEMS devices with an element having varying widths

A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process

A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

SENSOR DEVICE AND METHOD OF FABRICATION
20210221677 · 2021-07-22 ·

A device includes a substrate, a first electrode formed on the substrate and a structural layer formed on the substrate. The structural layer includes a movable mass and a fixed portion, the movable mass being suspended above the substrate and the first electrode being interposed between the substrate and the movable mass. A second electrode is spaced apart from an upper surface of the movable mass by a gap and an anchor couples the second electrode to the fixed portion of the structural layer. A method entails integrating formation of the second electrode into a wafer process flow in which the first electrode and the structural layer are formed.

PULSE TRAIN EXCITATION FOR CAPACATIVE MICROMACHINED ULTRASONIC TRANSDUCER
20210220872 · 2021-07-22 ·

Aspects of this disclosure relate to driving a capacitive micromachined ultrasonic transducer (CMUT) with a pulse train of unipolar pulses. The CMUT may be electrically excited with a pulse train of unipolar pulses such that the CMUT operates in a continuous wave mode. In some embodiments, the CMUT may have a contoured electrode.

CONTOURED ELECTRODE FOR CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER
20210220873 · 2021-07-22 ·

Aspects of this disclosure relate to a capacitive micromachined ultrasonic transducer (CMUT) with a contoured electrode. In certain embodiments, the CMUT has a contoured electrode. The electrode may be non-planar to correspond to a deflected shape of the outer plate. A change in distance between the electrode and the plate after deflection may be greater than a minimum threshold across the width of the CMUT.

MEMS Device Built On Substrate With Ruthenium Based Contact Surface Material
20210304973 · 2021-09-30 ·

A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

Broad range micro pressure sensor
11046575 · 2021-06-29 · ·

Disclosed is a micro pressure sensor including a plurality of modules that are operative over different ranges of pressure. The modules include a stack of at least two module layers, each module layer including a module body having walls that define a compartment and with the defined compartment partitioned into at least two sub-compartments, a port for fluid ingress or egress disposed in a first wall of the body, with remaining walls of the body being solid walls, a membrane affixed to a first surface of the module body covering the compartment, and an electrode affixed over a surface of the membrane.

METHOD TO PROTECT ELECTRODES FROM OXIDATION IN A MEMS DEVICE
20210265557 · 2021-08-26 ·

In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.

Method to protect electrodes from oxidation in a MEMS device

In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.

VEHICLE KEY AND METHOD OF MANUFACTURING THE SAME

A vehicle key capable of generating electrical energy by itself through energy harvesting, and a method of manufacturing the vehicle key are provided. The vehicle key includes a power generator including an energy generation module configured to generate electrical energy using energy harvesting and an electric condenser configured to store the generated electrical energy; an inputter configured to receive a user input; a communicator configured to communicate with the vehicle; and a controller configured to control the communicator to transmit a control signal corresponding to the received user input to the vehicle. At least one of the inputter, the communicator, and the controller may be configured to receive power from the power generator.