The present invention relates to novel nano- and micro-electromechanical devices and novel methods of preparing them. In one aspect, the invention includes methods of preparing a nanodevice. In certain embodiments, the methods comprise coating a polymer layer with a first at least one thin solid material layer using atomic layer deposition (ALD), thus forming an ALD-generated layer. In other embodiments, the methods comprise patterning the first at least one thin solid material layer to form a nanodevice. In yet other embodiments, the methods comprise releasing the nanodevice from the polymer layer.

A method of fabricating electromagnetic radiation detection devices including: forming a first mask on a substrate; forming a structural layer on the substrate using the first mask; forming a metallic layer overlying the structural layer; removing the first mask; forming a second mask on the substrate, the second mask comprising mask openings; selectively patterning the metallic layer using the mask openings; and removing the second mask.

A process for fabricating a symmetrical MEMS accelerometer. A pair of half parts is fabricated by, for each half part: (i) forming a plurality of resilient beams, first connecting parts, second connecting parts, and a plurality of comb structures, by etching a plurality of holes on a bottom surface of a first silicon wafer; (ii) etching a plurality of hollowed parts on a top surface of a second silicon wafer; (iii) forming a silicon dioxide layer on the top and bottom surface of the second silicon wafer; (iv) bonding the bottom surface of the first silicon wafer with the top surface of the second silicon wafer; (v) depositing a layer of silicon nitride on the bottom surface of the second silicon wafer, and removing parts of the silicon nitride layer and silicon dioxide layer on the bottom surface of the second silicon wafer; (vii) deep etching the exposed parts of the bottom surface of the second silicon wafer to the silicon dioxide layer located on the top surface of the second silicon wafer, and reducing the thickness of the first silicon wafer; and (viii) removing the silicon nitride layer, and etching the silicon dioxide to form the mass. The two half parts are then bonded along their bottom surface. The device is deep etched to form a movable accelerometer. A bottom cap is fabricated by hollowing out the corresponding area, and depositing metal as electrodes. The accelerometer is bonded with the bottom cap. Metal is deposited on the first silicon wafer to form electrodes.

A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

What is described is a method for producing a device having providing a substrate having an electrode which is exposed at a main side of the substrate. In addition, the method has forming a micro or nanostructure which has a spacer which is based on the electrode, wherein forming has the steps of: depositing a sacrificial layer on the main side, wherein the sacrificial layer has amorphous silicon or silicon dioxide; patterning a hole and/or trench into the sacrificial layer by means of a DRIE process; coating the sacrificial layer by means of ALD or MOCVD so that material of the nano or microstructure forms at the hole and/or trench, and removing the sacrificial layer.

A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern.

A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on a portion of at least four different surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.

A method for manufacturing a MEMS element, including the following: forming a least one stationary weight element and at least one moving weight element in the MEMS element, and positioning at least one fixing element at the stationary weight element and at the moving weight element, the fixing element being formed so as to be able to be severed.

The disclosure generally relates to method and apparatus for forming three-dimensional MEMS. More specifically, the disclosure relates to a method of controlling out-of-plane buckling in microstructural devices so as to create micro-structures with out-of-plane dimensions which are 1, 5, 10, 100 or 500 the film's thickness or above the surface of the wafer. An exemplary device formed according to the disclosed principles, includes a three dimensional accelerometer having microbridges extending both above and below the wafer surface.

The present disclosure relates to a method for manufacturing a layered structure for a MEMS apparatus, a layered structure which is a layered structure produced by the method, and a MEMS apparatus 200 which comprises such a layered structure. For the layered structure or the MEMS apparatus 200, an exemplary starting substrate is used in the manufacturing process, which forms the mechanically effective functional layer 10, wherein the mechanically effective functional layer 10 comprises a ferroelectric and/or piezoelectric material.