A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.

A transducer module, comprising: a supporting substrate, having a first side and a second side; a cap, which extends over the first side of the supporting substrate and defines therewith a first chamber and a second chamber internally isolated from one another; a first transducer in the first chamber; a second transducer in the second chamber; and a control chip, which extends at least partially in the first chamber and/or in the second chamber and is functionally coupled to the first and second transducers for receiving, in use, the signals transduced by the first and second transducers.

A device includes: a first sidewall including a first opening extending through the first sidewall; a first sensor attached to an interior surface of the first sidewall, wherein the first sensor is aligned to at least partially cover the first opening; a second sidewall opposite the first sidewall; a third sidewall attaching the first sidewall to the second sidewall; and a first contact pad disposed on an exterior surface of the third sidewall, wherein the first contact pad is configured to provide at least one of a power connection or a signal connection for the first sensor.

A MEMS assembly includes a package, wherein the package includes a substrate and a cover element, wherein a through opening is provided in the cover element, a MEMS component within the package on the cover element, an integrated circuit arrangement within the package on the substrate, and a support component within the package on the substrate, wherein the support component on the substrate is electrically coupled, by first electrical connection lines, to the MEMS component on the cover element and is electrically coupled, by second electrical connection lines, to the circuit arrangement on the substrate in order to produce an electrical connection between the MEMS component and the integrated circuit arrangement.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

A force sensor comprises a first substrate, a second substrate, a third substrate, and a package body. The first substrate includes a fixed electrode, at least one first conductive contact, and at least one second conductive contact. The second substrate is disposed on the first substrate and electrically connected to the first conductive contact of the first substrate. The second substrate includes a micro-electro-mechanical system (MEMS) element corresponding to the fixed electrode. The third substrate is disposed on the second substrate and includes a pillar connected to the MEMS element. The package body covers the third substrate. The foregoing force sensor has better reliability.

A terminal assembly structure of a MEMS microphone, including a signal let out board disposed at a terminal and a silicon microphone disposed at the signal let out board. The silicon microphone includes a housing, a substrate forming an accommodation space with the housing, and an MEMS chip accommodated in the accommodation space. A position of the substrate corresponding to the MEMS chip is disposed with a sound inlet connected to the outside, wherein a position where the signal let out board corresponding to the silicon microphone is disposed with an accommodation hole. The housing is accommodated in the accommodation hole. The substrate abuts a surface of the signal let out board and covers the accommodation hole. A surface of the substrate disposed with the housing is provided with a pad which is electrically connected with the signal let out board.

A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.