A hand-held ultrasound device, for placement on a subject, includes a semiconductor device and a housing to support the semiconductor device. The semiconductor device includes: a plurality of ultrasonic transducer elements; a plurality of pulsers coupled to the plurality of ultrasonic transducer elements; a plurality of waveform generators configured to drive the plurality of pulsers; receive processing circuitry configured to process ultrasound signals received by the plurality of ultrasonic transducer elements; and a plurality of independently controllable registers configured to store a plurality of different parameters for the waveform generators.

A die for a semiconductor chip package includes a first surface including an integrated circuit formed therein. The die also includes a backside surface opposite the first surface. The backside surface has a total surface area defining a substantially planar region of the backside surface. The die further includes at least one device formed on the backside surface. The at least one device includes at least one extension extending from the at least one device beyond the total surface area.

An integrated circuit device that comprises a single semiconductor substrate, a device layer formed on a frontside of the single semiconductor substrate, a redistribution layer formed on a backside of the single semiconductor substrate, a through silicon via (TSV) formed within the single semiconductor substrate that is electrically coupled to the device layer and to the redistribution layer, a logic-memory interface (LMI) formed on a backside of the single semiconductor substrate that is electrically coupled to the redistribution layer, and a MEMS device formed on the backside of the single semiconductor substrate that is electrically coupled to the redistribution layer.

A nanosheet MEMS sensor device and method are described for integrating the fabrication of nanosheet transistors (61) and MEMS sensors (62) in a single nanosheet process flow by forming separate nanosheet transistor and MEMS sensor stacks (12A-16A, 12B-16B) of alternating Si and SiGe layers which are selectively processed to form gate electrodes (49A-C) which replace the silicon germanium layers in the nanosheet transistor stack, to form silicon fixed electrodes using silicon layers (13B-2, 15B-2) on a first side of the MEMS sensor stack, and to form silicon cantilever electrodes using silicon layers (13B-1, 15B-1) on a second side of the MEMS sensor stack by forming a narrow trench opening (54) in the MEMS sensor stack to expose and remove remnant silicon germanium layers on the second side in the MEMS sensor stack.

The present disclosure is directed to a monolithic MEMS (micro-electromechanical system) platform having a temperature sensor, a pressure sensor and a gas sensor, and an associated method of formation. In some embodiments, the MEMS platform includes a semiconductor substrate having one or more transistor devices and a temperature sensor. A dielectric layer is disposed over the semiconductor substrate. A cavity is disposed within an upper surface of the dielectric layer. A MEMS substrate is arranged onto the upper surface of the dielectric layer and has a first section and a second section. A pressure sensor has a first pressure sensor electrode that is vertically separated by the cavity from a second pressure sensor electrode within the first section of a MEMS substrate. A gas sensor has a polymer disposed between a first gas sensor electrode within the second section of a MEMS substrate and a second gas sensor electrode.

Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

The present invention disclosed a micro acoustic collector with a lateral cavity, comprising: a base metal layer; a movable film, an annular side wall; a lateral metal layer. The movable film faces towards the base metal layer to form a hollow space. The lateral metal layer is formed at a side of the movable film and around the movable film, fixed by the annular side wall and spaced apart from peripheral of the movable film by a distance, and the lateral metal layer faces towards the base metal layer to form a lateral cavity to assist an acoustic collection.