A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

A microphone device is provided. The microphone device includes a microphone cover, a circuit board, an integrated circuit, a first acoustic sensor, and a second acoustic sensor. The circuit board is coupled to the microphone cover. The circuit board includes a first acoustic port and a second acoustic port. The integrated circuit is coupled to the microphone cover and the circuit board to form a first chamber and a second chamber. The first acoustic sensor is arranged in the first chamber. The second acoustic sensor is arranged in the second chamber. The integrated circuit is coupled to the first acoustic sensor and the second acoustic sensor.

A static random access memory (SRAM) device is provided in accordance with some embodiments. The SRAM device comprises a plurality of two-port SRAM arrays, which comprise a plurality of two-port SRAM cells. Each two-port SRAM cell comprises a write port portion, a read port portion, a first plurality of metal lines located in a first metal layer, a second plurality of metal lines located in a second metal layer, a third plurality of metal lines located in a third metal layer a plurality of edge cells, a plurality of well strap cells, and a plurality of jumper structures. Each jumper structure comprises first, second, and third metal landing pads located in the second metal layer and electrically connecting metal lines of the first and third metal layers.

A microphone device is provided. The microphone device includes a microphone cover, a circuit board, an integrated circuit, a first acoustic sensor, and a second acoustic sensor. The circuit board is coupled to the microphone cover. The circuit board includes a first acoustic port and a second acoustic port. The integrated circuit is coupled to the microphone cover and the circuit board to form a first chamber and a second chamber. The first acoustic sensor is arranged in the first chamber. The second acoustic sensor is arranged in the second chamber. The integrated circuit is coupled to the first acoustic sensor and the second acoustic sensor.

A static random access memory (SRAM) device is provided in accordance with some embodiments. The SRAM device comprises a plurality of two-port SRAM arrays, which comprise a plurality of two-port SRAM cells. Each two-port SRAM cell comprises a write port portion, a read port portion, a first plurality of metal lines located in a first metal layer, a second plurality of metal lines located in a second metal layer, a third plurality of metal lines located in a third metal layer a plurality of edge cells, a plurality of well strap cells, and a plurality of jumper structures. Each jumper structure comprises first, second, and third metal landing pads located in the second metal layer and electrically connecting metal lines of the first and third metal layers.

A sensor including a sensor element for acquiring a measuring signal, the measuring signal including at least one useful signal component in a useful signal frequency range and at least one interference signal component in an interference signal frequency range, and a readout circuit for converting the measuring signal into an analog electrical sensor signal. A feedback circuit is provided, which feeds back the output signal of the readout circuit to the input of the readout circuit at which the measuring signal is applied, and the total transmission function H(s) of the readout circuit and feedback circuit induces an attenuation of the analog sensor signal in the interference signal frequency range, while the analog sensor signal in the useful signal frequency range is not attenuated.

According to an example aspect of the present invention, there is provided an apparatus comprising a silicon layer comprising security circuitry and a first part of a first sensor, an insulator layer attached on the silicon layer, comprising integrated therein a second part of the first sensor, and a conducting pathway coupling the security circuitry to the first sensor, comprising a portion extending on the insulator layer and portions extending at least partly through the insulator layer.

A microphone system has a package forming an interior chamber, and a MEMS microphone secured within the interior chamber. The package forms an aperture for permitting acoustic access to the interior of the chamber and thus, the MEMS microphone. The system also has two dies; namely, the system has a primary circuit die within the interior chamber, and an integrated passive device die electrically connected with the primary circuit die. The primary circuit die is electrically connected with the MEMS microphone and has at least one active circuit element.

A physical quantity sensor includes a sensor element, an integrated circuit that is electrically connected to the sensor element, and a ceramic package (base body) on which the integrated circuit is mounted. A first conductor pattern (interconnection pattern) for electrical connection with the outside is provided on one surface of the ceramic package. A second conductor pattern is provided to be electrically connected to the interconnection pattern. The second conductor pattern includes an interconnection pattern that passes through the inside of the ceramic package, and a metallized region that is exposed on the other surface of the ceramic package. The interconnection pattern is longer than a distance between the one surface and the other surface of the ceramic package.

A static random access memory (SRAM) device is provided in accordance with some embodiments. The SRAM device comprises a plurality of two-port SRAM arrays, which comprise a plurality of two-port SRAM cells. Each two-port SRAM cell comprises a write port portion, a read port portion, a first plurality of metal lines located in a first metal layer, a second plurality of metal lines located in a second metal layer, a third plurality of metal lines located in a third metal layer a plurality of edge cells, a plurality of well strap cells, and a plurality of jumper structures. Each jumper structure comprises first, second, and third metal landing pads located in the second metal layer and electrically connecting metal lines of the first and third metal layers.