A micromechanical sensor device and a corresponding manufacturing method are described. The micromechanical sensor device is fitted with a substrate including a front side and a rear side; a micromechanical sensor chip including a sensor area attached to the front side of the substrate; and a capping unit attached to the front side of the substrate, which is formed at least partially by an ASIC chip. The capping unit surrounds the micromechanical sensor chip in such a way that a cavity closed toward the front side of the substrate is formed between the sensor area of the micromechanical sensor chip and the ASIC chip. A mold package is formed above the capping unit.

An electronic device includes a substrate, a functional element disposed on a principal plane of the substrate, a lid body, the functional element being housed in a space covered by the lid body and the substrate, the lid body including a recess at a side opposed to the functional element, an outer surface at the opposite side of the recess, a first hole section including an inclined surface and a bottom surface on the outer surface, and a second hole section piercing through the lid body between the recess and the bottom surface and having an inner wall surface, a joining section of the inclined surface and the bottom surface in the first hole section being a curved surface, the lid body containing silicon, and a sealing member that seals the first hole section communicating with the space.

A MEMS device is disclosed. In an embodiment a MEMS device includes a substrate having an active region and at least one integrated electrical and mechanical connection element configured to electrically and mechanically mount the MEMS device to a carrier, wherein the connection element comprises a stress-reducing structure.

A multi-layer, stress-isolation platform configured for attaching a MEMS die to a base includes a first platform, a first layer of attachment material between the base and the first platform and attaching the first platform to the base, a MEMS die, and a second layer of attachment material between the first platform and the MEMS die and attaching the MEMS die to the first platform.

A MEMS device is provided with: a supporting base, having a bottom surface in contact with an external environment; a sensor die, which is of semiconductor material and integrates a micromechanical detection structure; a sensor frame, which is arranged around the sensor die and is mechanically coupled to a top surface of the supporting base; and a cap, which is arranged above the sensor die and is mechanically coupled to a top surface of the sensor frame, a top surface of the cap being in contact with an external environment. The sensor die is mechanically decoupled from the sensor frame.

A rotating or tilting MEMS structure, such as a tilt mirror for an optical device, includes a damping mechanism, provided by locating an inlay block structure underneath the MEMS rotating surface. Damping is created by the temporary squeezing or compression of the air, atmosphere, or gas(es) surrounding the MEMS structure, between the underside of the MEMS tilting surface and the top surface of the block. Movement of the MEMS surface away from the top surface of the block will also be damped by the temporary reduction in pressure. The block structure is fabricated separately from the MEMS tilt-mirror structure and located under the MEMS tilt-mirror structure, either before or during the die-attach or die-bonding process. The damping effect serves to minimize and limit the amplitude and duration of oscillatory motion of the MEMS tilt-mirror, following intentional movement of the mirror, or, in response to external shock and vibrational forces.

A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.

A sensor includes a sensor substrate, and an upper lid substrate joined to an upper surface of the sensor substrate. The sensor substrate includes a fixed part, a deformable beam connected to the fixed part, and a weight connected to the beam. The weight is movable relative to the fixed part. The upper lid substrate includes a first part containing silicon and a second part joined to the first part and containing glass. The first part includes a projection protruding toward the sensor substrate relative to the second part. The sensor has high accuracy or high reliability.

A method for producing a micromechanical pressure sensor. The method includes: providing a MEMS wafer having a silicon substrate and a first cavity developed therein underneath a sensor diaphragm; providing a second wafer; bonding the MEMS wafer to the second wafer; and exposing a sensor core from the rear side; a second cavity being formed in the process between the sensor core and the surface of the silicon substrate, and the second cavity being developed with the aid of an etching process which is carried out using etching parameters that are modified in a defined manner.

The microphone and pressure sensor package comprises a carrier (1) with an opening (16), a microphone device (20) including a diaphragm (21) and a perforated back plate (22) arranged above the opening (16), an ASIC device (6), and a cover (9) forming a cavity (17) between the carrier (1) and the cover (9). The ASIC device (6) and the microphone device (20) are arranged in the cavity (17). A sensor element (7) provided for a pressure sensor is integrated in the ASIC device (6). The pressure outside the cavity (17) is transferred to the sensor element (7) through the opening (16), the diaphragm (21), and the back plate (22).