Patent classifications
B81C1/00333
Magnet placement for integrated sensor packages
Magnet placement is described for integrated circuit packages. In one example, a terminal is applied to a magnet. The magnet is then placed on a top layer of a substrate with solder between the terminal and the top layer, and the solder is reflowed to attach the magnet to the substrate.
Actively preventing charge induced leakage of semiconductor devices
A structure for preventing charge induced leakage of a semiconductor device includes a shield separated from a first interconnect by at least a first lateral spacing and separated from a second interconnect by at least a second lateral spacing. The first interconnect is connected to a first junction and the second interconnect is connected to a second junction. A shield bias is connected to the shield to terminate an electromagnetic field on the shield. The shield between the first and second lateral spacings has a minimum width to substantially prevent formation of a conductive channel between the first and second junctions. The shield may be formed over a portion of the first junction and over a portion of the second junction to substantially prevent formation of another conductive channel between the first and second junctions at a location that does not have the first and second lateral spacings.
MEMS package comprising multi-depth trenches
The present disclosure relates to a MEMS package having different trench depths, and a method of fabricating the MEMS package. In some embodiments, a cap substrate is bonded to a device substrate. The cap substrate comprises a cap substrate bonded to a device substrate. The cap substrate comprises a MEMS trench, a scribe trench, and an edge trench respectively recessed from at a front-side surface of the cap substrate. A stopper is disposed within the MEMS trench and raised from a bottom surface of the MEMS trench.
Method for producing a component
In a method for producing a component, a first layer composite is first produced, comprising a structured layer and a trench filled with an insulating material. The structured layer is electrically conductive at least in a first region. The trench filled with an insulating material extends outwards from a first surface of the structured layer and is arranged in the first region of the structured layer. The first surface of the structured layer faces a first surface of the first layer composite. The method additionally has the step of producing a second layer composite, which has a first depression in a first surface of the second layer composite, and the step of connecting the first layer composite to the second layer composite. The first surface of the first layer composite adjoins the first surface of the second layer composite at least in some regions, said filled trench being arranged within the lateral position of the first depression. After the first layer composite has been connected to the second layer composite, the thickness of the first layer composite from a second surface of the first layer composite to the depth of the filled trench is reduced. The second surface of the first layer composite lies opposite the first surface of the first layer composite. The method further has the step of producing an active structure in the structured layer, said active structure comprising two second regions which are arranged in the first region of the structured layer and which are mechanically connected to each other in a rigid manner but are electrically insulated from each other by means of the filled trench.
ELECTRONIC PACKAGE INCLUDING CAVITY FORMED BY REMOVAL OF SACRIFICIAL MATERIAL FROM WITHIN A CAP
A method of fabricating an electronic component includes forming a functional unit on a main surface of a substrate, forming a sacrificial layer covering the functional unit on the main surface, forming a cap layer covering the sacrificial layer, the cap layer forming a periphery enclosing the cavity on the main surface, forming holes through the cap layer, forming a cavity by removing the sacrificial layer using a wet etching process through the holes, the holes including a peripheral hole communicating an inside of the cavity with an outside of the cavity along the main surface, and forming a first resin layer covering the cap layer and the main surface.
Molded Cavity Package with Embedded Conductive Layer and Enhanced Sealing
A base plate with a first side having an elevated portion, a recessed portion laterally surrounding the elevated portion, and a vertical face extending from the recessed portion to the elevated portion is provided. At least a part of the vertical face is covered with a metal layer. A mold compound structure is formed on the first side with the metal layer disposed between the first side and the mold compound structure such that the mold compound structure includes an elevated portion laterally surrounding a recessed portion, and opposing edge faces that vertically extend from the recessed portion to the elevated portion. At least a part of the base plate is subsequently removed such that the recessed portion of the mold compound structure is uncovered from the base plate and such that the metal layer remains on at least one uncovered section of the mold compound structure.
Packaged semiconductor die with micro-cavity
A packaged electronic die having a micro-cavity and a method for forming a packaged electronic die. The packaged electronic die includes a photoresist frame secured to the electronic die and extending completely around the device. The photoresist frame is further secured to a first major surface of a substrate so as to form an enclosure around the device. Encapsulant material extends over the electronic die and around the sides of the electronic die. The encapsulant material is in contact with the first major surface of the substrate around the entire periphery of the electronic die so as to form a seal around the electronic die.
Transducer with enlarged back volume
A packaged integrated device includes a package substrate having a first surface and a second surface opposite the first surface, and the package substrate has a hole therethrough. The integrated device package also includes a first lid mounted on the first surface of the package substrate to define a first cavity, and a second lid mounted on the second surface of the package substrate to define a second cavity. A microelectromechanical systems (MEMS) die can be mounted on the first surface of the package substrate inside the first cavity and over the hole. A port can be formed in the first lid or the second lid.
WATERPROOF MEMBER, MANUFACTURING METHOD OF WATERPROOF MEMBER, PRESSURE SENSOR, AND ELECTRONIC MODULE
A waterproof member includes a laminated body including a second silicon layer and a second silicon oxide layer, and a through hole that is provided in the laminated body, prevents passing of liquid, and allows passing of gas, the through hole includes a first through hole that passes through the second silicon layer, and a second through hole passing through the second silicon oxide layer and communicating with the first through hole, and a width of the second through hole is smaller than a width of the first through hole.
Method to package multiple MEMS sensors and actuators at different gases and cavity pressures
A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.