The present invention relates to a method for producing a super-hydrophobic surface, and to a stack having a super-hydrophobic surface prepared by the above method. The super-hydrophobic surface may be realized only by plasma etching and deposition. The super-hydrophobic surface according to the present invention has a very low work of adhesion less than or equal to 3 mJ/m.sup.2. This super-hydrophobic surface may be applied to various fields including self-cleaning surface, anti-fogging surface, automobile glass surface, and drug delivery device surface.

The disclosure relates to systems and methods for metering a dose volume of fluid that may be used to treat microelectronic substrates. The system enables precision dispensing of relatively small amounts of a liquid chemical into a chemical bath or processing chamber for microelectronic substrates. The dispensing device may include a fluid conduit with a plurality of actuation devices that may limit fluid communication between the actuation devices and store a portion of the fluid in expandable membrane. The actuation devices may push or pull the fluid within the fluid conduit when the expandable membrane expands or contracts. The configuration and operation of the actuation devices may enable the collection, isolation, and dispensing of the dose volume.

Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.

An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity through a via formed into the membrane layer.

A desmear module for a horizontal galvanic or wet-chemical process line for metal, in particular copper, deposition on a substrate to be treated for a removal of precipitates comprising a desmear container connectable to a desmear unit, a pump and at least a first liquid connection element for connecting said pump with the desmear unit, wherein said pump is in conjunction with said desmear unit by said at least first liquid connection element; and wherein a treatment liquid level is provided inside the desmear module, which is above an intake area of the pump; wherein the desmear module further comprises at least a first liquid area, at least an adjacent second liquid area comprising the intake area of the pump, and at least a first separating element arranged between said at least first liquid area and said at least second liquid area.

Disclosed herein an inertial sensor and a method of manufacturing the same. An inertial sensor 100 according to a preferred embodiment of the present invention is configured to include a plate-shaped membrane 110, a mass body 120 that includes an adhesive part 123 disposed under a central portion 113 of the membrane 110 and provided at the central portion thereof and a patterning part 125 provided at an outer side of the adhesive part 123 and patterned to vertically penetrate therethrough, and a first adhesive layer 130 that is formed between the membrane 110 and the adhesive part 123 and is provided at an inner side of the patterning part 125. An area of the first adhesive layer 130 is narrow by isotropic etching using the patterning part 125 as a mask, thereby making it possible to improve sensitivity of the inertial sensor 100.

Illustrative embodiments of microdevices and methods of manufacturing such microdevices are disclosed. In at least one illustrative embodiment, one or more microdevices may be formed on a substrate, with each of the one or more microdevices comprising a body micromachined from a continuous film formed on the substrate, the continuous film having a controlled microstructure of cellulose nanocrystals (CNC).

The present invention is able to provide: a silicon etching liquid which anisotropically dissolves single crystal silicon, and which is characterized by containing (1) potassium hydroxide or sodium hydroxide, (2) a hydroxyl amine and (3) a cyclic compound represented by general formula (I), which has a thiourea group and wherein N and N are linked; and a silicon etching method which uses this silicon etching liquid. ##STR00001## (In general formula (I), Q represents an organic group having a saturated or unsaturated carbon-carbon bond.) By using the above-described silicon etching liquid, high etching rate can be achieved without lowering the etching rate of silicon and stability of the etching liquid is not impaired even in cases where copper is present in the etching liquid and/or where copper ions are dissolved in the etching liquid.

A method and apparatus for the etching of variable depth features in a substrate is described. Movement of the substrate relative to an etchant (e.g. into or out of the etchant) during the etching process is utilised to provide a varying etch time, and hence depth, across the substrate, and in various examples this is enabled without requiring a varying mask.

A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the reference plane and remote therefrom and the second metal lines have surfaces below the reference plane and remote therefrom. A dielectric layer can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines.