A desmear module for a horizontal galvanic or wet-chemical process line for metal, in particular copper, deposition on a substrate to be treated for a removal of precipitates comprising a desmear container connectable to a desmear unit, a pump and at least a first liquid connection element for connecting said pump with the desmear unit, wherein said pump is in conjunction with said desmear unit by said at least first liquid connection element; and wherein a treatment liquid level is provided inside the desmear module, which is above an intake area of the pump; wherein the desmear module further comprises at least a first liquid area, at least an adjacent second liquid area comprising the intake area of the pump, and at least a first separating element arranged between said at least first liquid area and said at least second liquid area.

A symmetrical MEMS accelerometer. The accelerometer includes a top half and a bottom half bonded together to form the frame and the mass located within the frame. The frame and the mass are connected through resilient beams. A plurality of hollowed parts and the first connecting parts are formed on the top and bottom side of the mass, respectively. The second connecting parts are formed on the top and bottom side of the frame, respectively. The resilient beams connect the first connecting part with the second connecting part. Several groups of comb structures are formed on top of the hollowed parts. Each comb structure includes a plurality of moveable teeth and fixed teeth. The moveable teeth extend from the first connecting part and the fixed teeth extend from the second connecting part. Capacitance is formed between the movable teeth and the fixed teeth. Since the accelerometer is symmetrical with a large mass, it has a large capacitance with a low damping force.

Method of fabricating a microfluidic device by means of inducing internal cracks in fused silica employing a picosecond laser beam, firstly utilizing irradiation of a focused temporally controlled picosecond laser beam in fused silica to generate a spatially selective modification region including randomly oriented nanocracks, then employing chemical etching to remove the irradiated area and obtain a hollow and connected three-dimensional microstructure, thereby achieving three-dimensional fabrication of microchannel structures inside the fused silica. The method can realize polarization insensitive three-dimensional uniform etching by regulating the pulse width of the picosecond laser beam, and has high chemical etch rate and selectivity, applicable for fabrication of large-sized three-dimensional microfluidic systems, high-precision 3D glass printing, etc.

Certain exemplary embodiments can provide a method comprising, via computer aided design, designing parts of an object that comprises an outer shell and an inner body, at least one of the outer shell and the inner body defining a specific volume negative space relief. In certain exemplary embodiments, the specific volume negative space relief defines a channel constructed to pass at least one of a fluid and a gas.

A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed on and corresponds to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a sealing layer, and at least a portion of the sealing layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the sealing layer define a chamber.

A deep cavity etching method is disclosed. The deep cavity includes a large cavity and a small cavity forming a step. The method includes the following steps: providing a silicon substrate containing at least an upper surface; forming an oxide layer on the upper surface of the silicon substrate; and coating the first photoresist on the side of the oxide layer away from the silicon substrate. The deep cavity of the step avoids the photoresist spraying process with higher efficiency and lower cost, reduces the process cost and improves the production capacity.

The present disclosure discloses a method and apparatus for manufacturing a microfluidic chip with a femtosecond plasma grating. The method is characterized in that two or more beams of femtosecond pulse laser act on quartz glass together at a certain included angle and converge in the quartz glass, and when pulses achieve synchronization in time domain, the two optical pulses interfere; Benefited by constraint of an interference field, only one optical filament is formed in one interference period; and numbers of optical filaments are arranged equidistantly in space to form the plasma grating. The apparatus for manufacturing the microfluidic chip includes a plasma grating optical path, a microchannel processing platform, and a hydrofluoric acid ultrasonic cell.

The present invention relates to the field of semiconductor technology and provides a method for forming an MEMS cavity structure, which can improve process yield for MEMS integration and encapsulation for functional stability and reliability of the MEMS structure. The method includes steps of: forming an adhesion material layer on a bottom layer; forming a bottom layer on a substrate; forming a adhesion material layer on the bottom layer; forming a support structure and a sacrificial layer that is filled in a space surrounded by the support structure on the adhesion material layer; forming a capping layer on the support structure and the sacrificial layer, and the bottom layer, the support structure and the capping layer together defining a cavity; and releasing the sacrificial layer and the adhesion material layer to form the cavity structure.

There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

A method for bonding with precision alignment. A first bonding surface is bonded with a second bonding surface, where features on the first and second bonding surfaces are precisely overlaid during the bonding. An etch is then performed on the first and/or second bonding surfaces to create recesses in the first and/or second bonding surfaces. Precision alignment of the first and second bonding surfaces is then enabled by a volatile fluid deployed between the first and second bonding surfaces, where the recesses enable removal of the volatile fluid from a bonding interface during and after the bonding.