The present invention is related to a sensor. In particular, the present invention is related to a MEMS strain gauge die and its fabrication process. The MEMS strain gauge die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present strain gauge die is more immune to temperature effects. It is especially suitable for operating in a high temperature environment and is capable of delivering accurate and reliable strain measurements at low cost.

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.

A DNA sequencing device, and related methods, include a nanopore or nanochannel structure, and a nanoelectrode. The nanoelectrode includes electrode members having free ends exposed within the nanopore or nanochannel structure, an electrode gap defined between of the free ends, and plated portions formed on the free ends to provide a reduced sized for the electrode gap.

A DNA sequencing device, and related methods, include a nanopore or nanochannel structure, and a nanoelectrode. The nanoelectrode includes electrode members having free ends exposed within the nanopore or nanochannel structure, an electrode gap defined between of the free ends, and plated portions formed on the free ends to provide a reduced sized for the electrode gap.

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.

A method for manufacturing a micromechanical timepiece part starting from a silicon-based substrate, including, forming pores on the surface of at least one part of a surface of said silicon-based substrate of a determined depth, entirely filling the pores with a material chosen from diamond, diamond-like carbon, silicon oxide, silicon nitride, ceramics, polymers and mixtures thereof, in order to form, in the pores, a layer of the material of a thickness at least equal to the depth of the pores. A micromechanical timepiece part including a silicon-based substrate which has, on the surface of at least one part of a surface of the silicon-based substrate, pores of a determined depth, the pores being filled entirely with a layer of a material chosen from diamond, diamond-like carbon, silicon oxide, silicon nitride, ceramics, polymers and mixtures thereof, of a thickness at least equal to the depth of the pores.

Techniques for fabricating a slanted structure are disclosed. In one embodiment, a method for fabricating a slanted structure on a material layer includes forming a mask layer on the material layer, and implanting ions into a plurality of regions of the material layer at a slant angle greater than zero using an ion beam and the mask layer. The slant angle is measured with respect to a surface normal of the material layer. Implanting the ions into the plurality of regions of the material layer changes a refractive index or an etch rate of the plurality of regions of the material layer. In some embodiments, the method further includes wet-etching the material layer using an etchant to remove materials in the plurality of regions of the material layer. In some embodiments, the method includes either simultaneous or post-implantation etching of modified material through a dry etching process using reactive etchants in feed gas.

The present invention provides a simple method for ablating a protective thin film on a bulk surface and roughening the underlying bulk. In an embodiment, silicon nitride thin films, which are useful as etch-stop masks in micro- and nano-fabrication, is removed from a silicon wafer's surface using a hand-held flameless Tesla-coil lighter. Vias created by a spatially localized electron beam from the lighter allow a practitioner to perform micro- and nano-fabrication without the conventional steps of needing a photoresist and photolithography. Patterning could be achieved with a hard mask or rastering of the spatially confined discharge, offeringwith low barriers to rapid useparticular capabilities that might otherwise be out of reach to researchers without access to conventional, instrumentation-intensive micro- and nano-fabrication workflows.

A method for manufacturing a millimeter scale electromechanical device includes coupling a stainless steel ply to a polymer carrier ply, coating the stainless steel ply in a photo resist material, masking the photoresist material, exposing the photoresist material to cure a portion of the photoresist material, developing the photoresist material to remove uncured photoresist material from the stainless steel ply, chemically etching the stainless steel ply to remove a patterned portion of the stainless steel ply, dissolving the polymer carrier ply to release unwanted chips of the stainless steel ply, and adhering the patterned stainless steel ply to a flexible material ply to form a sub-laminate.