A method of manufacturing an electromechanical systems structure includes manufacturing sub-micron structural features. In some embodiments, the structural features are less than the lithographic limit of a lithography process.

Embodiments provide anisotropic etch processes for silicon carbon nitride (SiCN) or other materials within multi-color structures with improved selectivity to materials in adjacent lines. Cyclic surface modification and activation processes are used to achieve an anisotropic etch with desired selectivity with respect to other materials in a multi-color structure. For example embodiments, selectivity of a first material, such as SiCN or silicon nitride, with respect to other materials in adjacent lines for the multi-color structure is achieved using the cyclic modification/activation processes. The materials within the multi-color structure can include, for example, silicon, silicon nitride, silicon carbon oxide, silicon oxide, titanium nitride, and/or other materials. For one embodiment, hydrogen is introduced to process chemistry to facilitate the surface modification. For one embodiment, a non-corrosive gas, such as nitrogen trifluoride, is included in the process chemistry with the hydrogen.

In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

The invention relates to a method for producing optical components, wherein a first contact surface is formed by bringing a deformation element into contact with a carrier; and a second contact surface is formed by applying a functional element to the deformation element; said second contact surface at least partially overlapping the first contact surface, so that a deformation zone is formed by the area of the deformation element that lies between the overlapping areas of the two contact surfaces, wherein at least one portion of the deformation zone is heated and deformed in such a way that the functional element is deflected, in particular, shifts and/or tilts, and the functional element is joined with the deformation element during the process step of applying the functional element to the deformation element and/or during the process step of heating and deforming the deformation zone.

Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.

The present invention provides a glass composition that allows holes with a circular contour and a smooth inner wall to be formed by a collective micro-hole-forming process using a combination of modified portion formation by ultraviolet laser irradiation and etching, the glass composition being adapted for practical continuous production. The present invention relates to a glass for laser processing, the glass including a metal oxide serving as a coloring component, the glass having a glass composition including, in mol %: 45.0%SiO.sub.268.0%; 2.0%B.sub.2O.sub.320.0%; 3.0%Al.sub.2O.sub.320.0%; 0.1%TiO.sub.25.0%; and 0%ZnO9.0%, wherein a relationship of 0Li.sub.2O+Na.sub.2O+K.sub.2O<2.0% is satisfied.

In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.

A method of manufacturing a patterned aluminum nitride layer includes growing an amorphous patterned layer on a seed layer, which promotes growth of a first type aluminum nitride layer that has a disordered crystallographic structure. The seed layer promotes growth of a second type aluminum nitride layer with a vertically oriented columnar crystal structure. The method also includes depositing an aluminum nitride layer over the amorphous patterned layer and the seed layer to form the first type aluminum nitride layer with the disordered crystallographic structure over the amorphous patterned layer and the second type aluminum nitride layer with the vertically oriented columnar crystal structure over the seed layer. The method also includes depositing a masking layer over the second type aluminum nitride layer and etching away the first type aluminum nitride layer.

A touch sensing panel includes a substrate, a touch sensing electrode, an etching-inhibition unit, and a peripheral trace. The substrate includes a touch sensing area and a peripheral area. The touch sensing electrode and the peripheral trace are respectively formed on the touch sensing area and the peripheral area, and the etching-inhibition unit is at least formed on the touch sensing area. The touch sensing electrode is electrically connected with the peripheral trace and includes a first part of a metal nanowire layer, which is patterned. The peripheral trace includes a metal layer and a second part of the metal nanowire layer. The metal layer directly contacts the second part of the metal nanowire layer. The metal layer and the second part of the metal nanowire layer have a co-planar etch-surface.