The etching of a sacrificial silicon dioxide (SiO.sub.2) portion in a microstructure such as a microelectro-mechanical structures (MEMS) by the use an etchant gas, namely hydrogen fluoride (HF) vapor is performed with greater selectivity to other portions within the MEMS, and in particular portions of silicon nitride (Si.sub.3N.sub.4). This is achieved by the addition of a secondary non-etchant gas suitable for increase the ratio of difluoride reactive species (HF.sub.2.sup. and H.sub.2F.sub.2) to monofluoride reactive species (F.sup., and HF) within the HF vapor. The secondary non-etchant gas may comprise a hydrogen compound gas. The ratio of difluoride reactive species (HF.sub.2.sup. and H.sub.2F.sub.2) to the monofluoride reactive species (F.sup., and HF) within the HF vapor can also be increased by setting an etch operating temperature to 20 C. or below.

A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.

An engineered substrate comprises a base substrate, a monocrystalline sacrificial intermediate layer epitaxially grown over the base substrate, and a monocrystalline top layer epitaxially grown over the monocrystalline sacrificial intermediate layer. The engineered substrate may be used to form a free-standing microstructure comprising the engineered substrate by removing at least a portion of the intermediate layer from between the base substrate and the top layer.

A method of manufacturing an electromechanical systems structure includes manufacturing sub-micron structural features. In some embodiments, the structural features are less than the lithographic limit of a lithography process.

The invention relates to a method for producing optical components, wherein a first contact surface is formed by bringing a deformation element into contact with a carrier; and a second contact surface is formed by applying a functional element to the deformation element; said second contact surface at least partially overlapping the first contact surface, so that a deformation zone is formed by the area of the deformation element that lies between the overlapping areas of the two contact surfaces, wherein at least one portion of the deformation zone is heated and deformed in such a way that the functional element is deflected, in particular, shifts and/or tilts, and the functional element is joined with the deformation element during the process step of applying the functional element to the deformation element and/or during the process step of heating and deforming the deformation zone.

A micro-device including at least one first element comprising at least: a portion of material corresponding to a compound of at least one semi-conductor and at least one metal, first and second protective layers each covering one of two opposite faces of said portion of material, such that the first and second protective layers are in direct contact with said portion of material, that the first protective layer comprises at least one first material able to withstand an HF etching, that the second protective layer comprises at least one second material able to withstand the HF etching, and that at least one of the first and second materials able to withstand the HF etching includes the semi-conductor.

The disclosure relates to methods for a multi-step plasma process to remove metal hard mask layer from an underlying hard mask layer that may be used to implement a sub-lithographic integration scheme. The sub-lithographic integration scheme may include iteratively patterning several features into the metal hard mask layer that may be transferred to the hard mask layer. However, the iterative process may leave remnants of previous films on top of the metal hard mask that may act as mini-masks that may interfere with the pattern transfer to the hard mask layer. One approach to remove the mini-masks may be to use a two-step plasma process that removes the mini-mask using a first gas mixture ratio of a carbon-containing gas and a chlorine-containing gas. The remaining metal hard mask layer may be removed using a second gas mixture ratio of the carbon-containing gas and the chlorine-containing gas.

An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.

In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.