A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of manufacturing a semiconductor device includes providing a semiconductor layer having a first-type region and a second-type region that are stacked and interface with each other to form a p-n junction, the first-type region defining a first side of the semiconductor layer and the second-type region defining a second side of the semiconductor layer. The method further includes providing an insulating layer on the second side of the semiconductor layer and etching the semiconductor layer from the first side of the semiconductor layer toward the second side of the semiconductor layer to form a trench. The first-type region corresponds to one of a n-type region and a p-type region, and the second-type region corresponds to the other of the n-type region and the p-type region.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

The present disclosure, in some embodiments, relates to a semiconductor structure. The semiconductor structure includes a substrate. As viewed from a top-view, the substrate has a first sidewall, one or more second sidewalls, and a plurality of third sidewalls. The first sidewall extends along a first direction and defines a first side of a trench. The one or more second sidewalls extends along the first direction and define a second side of the trench. The plurality of third sidewalls are oriented in parallel and extends in a second direction perpendicular to the first direction. The plurality of third sidewalls protrude outward from the second side of the trench and define a plurality of parallel releasing openings that are separated along the first direction by the substrate. The trench continuously extends in opposing directions past the plurality of parallel releasing openings.

The present disclosure, in some embodiments, relates to a method of semiconductor processing. The method may be performed by etching a substrate to define a trench within the substrate. A sacrificial material is formed within the trench. The sacrificial material has an exposed upper surface. A plurality of discontinuous openings are formed to expose separate segments of a sidewall of the sacrificial material. The plurality of discontinuous openings are separated by non-zero distances along a length of the trench. An etching process is performed to simultaneously etch the exposed upper surface and the sidewall of the sacrificial material.

A gyro sensor includes a plurality of beams connected via a turnaround part. A groove is provided on a main surface of at least one beam of the plurality of beams. Wall thicknesses on the main surface of two sidewalls facing each other of the groove in a direction orthogonal to a longitudinal direction of the beam satisfy 0.9≤T1/T2≤1.1, where T1 is the wall thickness of one sidewall and T2 is the wall thickness of the other sidewall.

A component for a micromechanical system has an upper side and a lower side disposed opposite the upper side and includes at least one first structural element that is arranged in a first region of the component and bounded by at least one first gap and at least one second structural element that is arranged in a second region of the component different from the first region and bounded by at least one second gap. The first region includes a first cutout in the lower side of the component, wherein a first thickness of the component in the first region is reduced in the second region with respect to a second thickness of the component. A minimal second gap width of the at least one second gap is larger than a minimal first gap width of the at least one first gap.

A system including two components intended to be in friction contact with each other in a given direction, wherein the friction occurs in a functional area, wherein the system is at least one of the two components including, on a surface in the functional area, a texture formed of a series of troughs of rounded shape separated by peaks or a series of bumps of rounded shape separated by troughs, the troughs extending parallel in the given direction and allowing for the evacuation of debris produced by friction and serving as a reservoir for a lubricant. A method for manufacturing at least one component or a mold by the DRIE (deep reactive ion etching) process, wherein surface defects on the sidewalls machined by the DRIE process are used to form the troughs.

The present invention provides a manufacturing method for MEMS structure. The method includes steps of: S1: providing a substrate, including a structural layer and a silicon-based layer overlapped with the structural layer; S2: carrying out a main etching process for etching out a cavity hole from an end of the silicon-based layer, which is far away from the structural layer, in a direction toward the structural layer until the cavity hole contacts the structural layer; and S3: carrying out an over-etching process for deepening the cavity hole and control an included angle between a side wall of the cavity hole and the structural layer to be larger than 10 but smaller than 90. The invention also provides a MEMS structural and a MEMS microphone manufactured by the method.