Selectively controlling application of a self-assembled monolayer (SAM) coating on a substrate of a device is presented herein. A method comprises: forming a material on a first substrate; removing a selected portion of the material from a defined contact area of the first substrate; forming a SAM coating on the material and the defined contact areathe SAM coating comprising a first adhesion force with respect to the material and a second adhesion force with respect to the defined contact area, and the first adhesion force being less than the second adhesion force; removing the SAM coating that has been formed on the material; and attaching the first substrate to the second substratethe first substrate being positioned across from the second substrate, and the SAM coating that has been formed on the defined contact area being positioned across from a bump stop of the second substrate.

A method for manufacturing a protective wafer including a frame wafer and an optical window, and to a method for manufacturing a micromechanical device including such a protective wafer having an inclined optical window. Also described are a protective wafer including a frame wafer and an optical window, and a micromechanical device including a MEMS wafer and such a protective wafer, which delimit a cavity, the protective wafer including an inclined optical window.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

In accordance with an embodiment, a microelectromechanical transducer includes a displaceable membrane having an undulated section comprising at least one undulation trough and at least one undulation peak and a plurality of piezoelectric unit cells. At least one piezoelectric unit cell is provided in each case in at least one undulation trough and at least one undulation peak, where each piezoelectric unit cell has a piezoelectric layer and at least one electrode in electrical contact with the piezoelectric layer. The membrane may be formed as a planar component having a substantially larger extent in a first and a second spatial direction, which are orthogonal to one another, than in a third spatial direction, which is orthogonal to the first and the second spatial direction and defines an axial direction of the membrane.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Three-dimensional microstructure devices having substantially perfect alignment and leveling of a three-dimensional microstructure with respect to a substrate having a plurality of discrete electrodes and relating fabricating methods are disclosed. Seed layers are deposited onto the discrete electrodes of the substrate, and the three-dimensional microstructure is bonded adjacent to the seed layers. A substantially uniform sacrificial layer is deposited onto exposed surfaces of the three-dimensional microstructure. A plurality of first gaps exists between the seed layers and corresponding regions of the sacrificial layer. Conductive layers are deposited to fill the first gaps. The sacrificial layer is dissolved to create a second plurality of gaps between the conductive layers and the corresponding regions of the three-dimensional microstructure. The second gaps are substantially uniform.

A method for manufacturing a filtering module comprising the steps of: forming a multilayer body comprising a filter layer of semiconductor material and having a thickness of less than 10 m, a first structural layer coupled to a first side of the filter layer, and a second structural layer coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings, which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane designed to inhibit passage of contaminating particles.