B81C1/00682

Method of manufacturing apparatus for harvesting and storing piezoelectric energy

A method of manufacturing an apparatus for harvesting and storing piezoelectric energy includes forming a groove at a side on a substrate. The method further includes embedding and planarizing a polymer in the groove, forming a piezoelectric energy harvesting device, which converts and stores an external vibration into electric energy, onto the substrate, and forming a piezoelectric MEMS cantilever by forming a hole at a side of the piezoelectric energy harvesting device and by removing the polymer in the groove through the hole.

MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES
20170320724 · 2017-11-09 ·

A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

Metallizing MEMS devices
09758367 · 2017-09-12 · ·

Various embodiments produce a semiconductor device, such a MEMS device, having metallized structures formed by replacing a semiconductor structure with a metal structure. Some embodiments expose a semiconductor structure to one or more a reacting gasses, such as gasses including tungsten or molybdenum.

Metallizing MEMS Devices
20170166439 · 2017-06-15 ·

Various embodiments produce a semiconductor device, such a MEMS device, having metallized structures formed by replacing a semiconductor structure with a metal structure. Some embodiments expose a semiconductor structure to one or more a reacting gasses, such as gasses including tungsten or molybdenum.

MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES
20170170059 · 2017-06-15 ·

A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

Method for producing a microelectromechanical transducer

A method can be used for producing a microelectromechanical transducer. A plurality of microelectromechanical transducers are produced on a single wafer. Each transducer includes a diaphragm. The wafer is divided into at least a first and a second region. The mechanical tensions of a random sample of diaphragms of the first region are established and the values are compared with a predetermined desired value. The mechanical tensions of a random sample of diaphragms of the second region are established and the values are compared with the predetermined desired value. The tensions of the diaphragms in the first region are adjusted to the predetermined desired value, and the tensions of the diaphragms in the second region are adjusted to the predetermined desired value.

MEMS grid for manipulating structural parameters of MEMS devices

A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES

A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

PRESSURE SENSOR AND METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
20250085175 · 2025-03-13 ·

Provided is a pressure sensor. The pressure sensor has a sensing region and a non-sensing region, and includes: a first flexible film layer, wherein a first groove is disposed in a first surface of the first flexible film layer, and the first groove is within the sensing region; a first electrode layer; a first insulative layer, disposed on a side, distal from the first flexible film layer, of the first electrode layer; a second electrode layer, wherein the second electrode layer is disposed on a side, distal from the first flexible film layer, of the first insulative layer; and a second flexible film layer, wherein the second flexible film layer is disposed on a side, distal from the first flexible film layer, of the second electrode layer.

MICROSCALE FLEXIBLE STRAIN SENSOR
20250122073 · 2025-04-17 · ·

Disclosed herein are devices comprising stretchable interdigitated electrode arrays and methods for fabricating the devices. The devices are capable of acting as elongation sensors by sensing a change in the capacitance of the device as the distance between the interdigitated fingers changes when the device is elongated or compressed. The device may be coupled to other devices such as to be able to sense elongation or compression of the coupled device. The interdigitated fingers of the device are supported by a substrate and may be fabricated using traditional microfabrication techniques.