Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.

A method of manufacturing a semiconductor structure includes providing a first substrate, disposing and patterning a plate over the first substrate, disposing a first sacrificial oxide layer over the plate, forming a plurality of recesses over a surface of the first sacrificial oxide layer, disposing and patterning a membrane over the first sacrificial oxide layer, disposing a second sacrificial oxide layer to surround the membrane and cover the first sacrificial oxide layer; and forming a plurality of conductive plugs passing through the plate or the membrane, wherein the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

Provided are a method for preparing a silicon wafer with a rough surface and a silicon wafer, which solves the problem in the prior art that viscous force is likely to be generated. The method includes: depositing a first film layer having a large surface roughness on a surface of a silicon wafer that has been subjected to planar planarization, and then blanket etching the first film layer to remove the first film layer. Then, the surface of the first silicon layer facing away from the substrate is further etched to form grooves and protrusions, which provide roughness, thereby forming a silicon wafer with a rough surface. When the silicon wafer approaches to another film layer, the viscous force generated therebetween is reduced, and thus the sensitivity of the MEMS device is improved and the probability of out-of-work MEMS device is reduced.

A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.

A method for manufacturing a micromechanical sensor, including the steps: providing a MEMS wafer that includes a MEMS substrate, a defined number of etching trenches being formed in the MEMS substrate in a diaphragm area, the diaphragm area being formed in a first silicon layer that is situated at a defined distance from the MEMS substrate; providing a cap wafer; bonding the MEMS wafer to the cap wafer; and forming a media access point to the diaphragm area by grinding the MEMS substrate.

A MEMS sensor including a diaphragm, a base surface area of the diaphragm being delimited with the aid of a peripheral wall structure, and the base surface area including at least two subareas, of which at least one of the subareas is deflectably situated, and the at least two subareas being separated from one another with the aid of at least one separating structure or being delimited by the latter. The separating structure includes at least one fluid through-opening for the passage of fluid.

A MEMS capacitance microphone includes a substrate, a diaphragm, a back plate structure and a plurality of support structures. The substrate is provided with a plurality of gate structures and a cavity penetrating through the substrate, and the gate structures extend from an inner wall of the cavity to the center of the cavity. The diaphragm is vibratably arranged on one side of the substrate and includes a main deformation zone and a non-main deformation zone. The back plate structure is arranged on the diaphragm, and the diaphragm is located between the substrate and the back plate structure. The support structures are arranged on the back plate structure, penetrate the periphery of the main deformation zone, and respectively abut against the gate structures. The MEMS capacitance microphone has higher rigidity of a back plate, and is capable of greatly reducing the impedance of air to increase its signal-to-noise ratio.

A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a second backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.

A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.

A device includes a micro-electromechanical system (MEMS) device layer comprising a proof mass. The proof mass includes a first proof mass portion and a second proof mass portion. The first proof mass portion is configured to move in response to a stimuli. The second proof mass portion has a spring attached thereto. The device further includes a substrate disposed parallel to the MEMS device layer. The substrate comprises a bumpstop configured to limit motion of the first proof mass portion. The device includes a first electrode disposed on the substrate facing the second proof mass portion. The first electrode is configured to apply a pulling force onto the second proof mass portion and to move the second proof mass portion towards the first electrode.