B81C1/00968

MEMS device with reduced electric charge, cavity volume and stiction
10988372 · 2021-04-27 · ·

A method includes forming a first mask on a first portion of a first surface of a substrate, forming a second mask on the first mask and further forming the second mask on a second portion of the first surface of the substrate, and etching an exposed portion of the first surface of the substrate and removing the second mask. According to some embodiments, an exposed portion of the first surface of the substrate is etched and the first mask is removed. An oxide layer is formed on the first surface of the substrate. A third mask is formed on the oxide layer except for a portion of the oxide layer corresponding to bumpstop features. The portion of the oxide layer corresponding to the bumpstop features is removed. An exposed portion of the first surface of the substrate is etched and the third mask is removed.

MEMS DEVICE WITH REDUCED ELECTRIC CHARGE, CAVITY VOLUME AND STICTION
20210070608 · 2021-03-11 · ·

A method includes forming a first mask on a first portion of a first surface of a substrate, forming a second mask on the first mask and further forming the second mask on a second portion of the first surface of the substrate, and etching an exposed portion of the first surface of the substrate and removing the second mask. According to some embodiments, an exposed portion of the first surface of the substrate is etched and the first mask is removed. An oxide layer is formed on the first surface of the substrate. A third mask is formed on the oxide layer except for a portion of the oxide layer corresponding to bumpstop features. The portion of the oxide layer corresponding to the bumpstop features is removed. An exposed portion of the first surface of the substrate is etched and the third mask is removed.

MEMS device with stiction recover and methods
10961119 · 2021-03-30 · ·

A MEMS device comprising a substrate comprising a die and a plurality of side-walls disposed upon the MEMS die, a proof-mass coupled to the substrate, the proof-mass is configured to be displaced within a first plane that is parallel to the die, wherein the proof-mass is configured to contact at least a sidewall, wherein the proof-mass is configured to adhere to the side-wall as a result of stiction forces, a driving circuit configured to provide a driving voltage in response to a driving signal indicating that the proof-mass is adhered to the side-wall, and an actuator coupled to the driving circuit disposed upon the side-wall, wherein the actuator is configured to receive a driving voltage and to provide an actuator force to the proof mass within the first plane in a direction away from the side-wall in response to the driving voltage, wherein the actuator force exceeds the stiction forces.

PIEZOELECTRIC ANTI-STICTION STRUCTURE FOR MICROELECTROMECHANICAL SYSTEMS
20210061641 · 2021-03-04 ·

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure

MEMS device and method for making the same

A microelectromechanical system device includes a substrate, a dielectric layer, an electrode, a surface modification layer and a membrane. The dielectric layer is formed on the substrate, and is formed with a cavity that is defined by a cavity-defining wall. The electrode is formed in the dielectric layer. The surface modification layer covers the cavity-defining wall, and has a plurality of hydrophobic end groups. The membrane is connected to the dielectric layer, and seals the cavity. The membrane is movable toward or away from the electrode. A method for making a microelectromechanical system device is also provided.

MEMS INERTIAL SENSOR WITH HIGH RESISTANCE TO STICTION
20200400712 · 2020-12-24 ·

An inertial structure is elastically coupled through a first elastic structure to a supporting structure so as to move along a sensing axis as a function of a quantity to be detected. The inertial structure includes first and second inertial masses which are elastically coupled together by a second elastic structure to enable movement of the second inertial mass along the sensing axis. The first elastic structure has a lower elastic constant than the second elastic structure so that, in presence of the quantity to be detected, the inertial structure moves in a sensing direction until the first inertial mass stops against a stop structure and the second elastic mass can move further in the sensing direction. Once the quantity to be detected ends, the second inertial mass moves in a direction opposite to the sensing direction and detaches the first inertial mass from the stop structure.

MANUFACTURING METHOD OF SEMICONDUCTOR STRUTURE

A method of manufacturing a semiconductor structure includes providing a first substrate, disposing and patterning a plate over the first substrate, disposing a first sacrificial oxide layer over the plate, forming a plurality of recesses over a surface of the first sacrificial oxide layer, disposing and patterning a membrane over the first sacrificial oxide layer, disposing a second sacrificial oxide layer to surround the membrane and cover the first sacrificial oxide layer; and forming a plurality of conductive plugs passing through the plate or the membrane, wherein the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

MEMS microphone and method of manufacturing the same
10841711 · 2020-11-17 · ·

A MEMS microphone includes a substrate defining a cavity, a diaphragm being spaced apart from the substrate, covering the cavity, and configured to generate a displacement of the diaphragm in response to an applied acoustic pressure, an anchor extending from an end portion of the diaphragm, and fixed to an upper surface of the substrate to support the diaphragm and a back plate disposed over the diaphragm, the back plate being spaced apart from the diaphragm such that an air gap is maintained between the back plate and the diaphragm, and defining a plurality of acoustic holes, wherein the anchor has a repetitive concave-convex shape in a direction toward a center of the diaphragm so that the anchor acts as a resistance to an acoustic wave.

MEMS DEVICE
20200290863 · 2020-09-17 ·

A micro-electro-mechanical system (MEMS) device includes a substrate, a proof mass, and a piezoelectric bump. The substrate has a surface. The proof mass is suspended over the surface of the substrate, wherein the proof mass is movable with respect to the substrate. The piezoelectric bump is disposed on the surface of the substrate and extends a distance from the surface of the substrate toward the proof mass.

Semiconductor structure and manufacturing method thereof

A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures; a membrane disposed opposite to the plate and including a plurality of corrugations, and a conductive plug extending through the plate and the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.