Provided herein is a method for manufacturing a semiconductor device. A substrate including a MEMS region and a connection region thereon is provided; a dielectric layer disposed on the substrate in the connection region is provided; a poly-silicon layer disposed on the dielectric layer is provided, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer is provided; and a passivation layer covering the dielectric layer is provided, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer, and a conductive layer conformally covering the connection pad and the poly-silicon layer in the transition region is provided.

Provided herein is a semiconductor device is provided. The semiconductor device includes a substrate including a MEMS region and a connection region thereon; a dielectric layer disposed on the substrate in the connection region; a poly-silicon layer disposed on the dielectric layer, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer; and a passivation layer covering the dielectric layer, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer.

A method for manufacturing a bonded substrate body in which an end portion of an adhesive is located at a position retreated in a direction to the inside of the bonded substrate body from an end surface of a bonding region of a first substrate and a second substrate includes forming a film on the end portion of the adhesive.

A method for manufacturing a micromechanical device includes providing a silicon substrate having a front side and a rear side, where a first normal of the front side deviates by a first angle from the <111> direction of the silicon substrate; forming in the front side first and second trenches that are spaced apart from and essentially parallel to each other, with the first and second trenches extending along a direction of the deviation; forming on the front side a first etching mask that covers the front side except for a first opening area between the first and second trenches; and anisotropically etching the front side using the etching mask, thereby forming in the opening area an oblique surface having a second angle to the first normal, which approximately corresponds to the first angle.

A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure.

A microelectromechanical systems (MEMS) package with high gettering efficiency is provided. A MEMS device is arranged over a logic chip, within a cavity that is hermetically sealed. A sensing electrode is arranged within the cavity, between the MEMS device and the logic chip. The sensing electrode is electrically coupled to the logic chip and is a conductive getter material configured to remove gas molecules from the cavity. A method for manufacturing the MEMS package is also provided.

A MEMS pressure transducer includes a semiconductor body, a lower dielectric region arranged above the semiconductor body, and a fixed electrode region and a lower anchoring region, which are formed by conductive material, are arranged on the lower dielectric region and are laterally separated from each other. A membrane of conductive material is suspended above the fixed electrode region so as to delimit a cavity upwardly, the fixed electrode region facing the cavity, the membrane being deformable as a function of pressure and forming a variable capacitor together with the fixed electrode region. An upper anchoring region of conductive material laterally delimits the cavity and is interposed, in direct contact, between the membrane and the lower anchoring region.

A method includes depositing a passivation layer on a substrate; depositing and patterning a first polysilicon layer on the passivation layer; depositing and patterning a first oxide layer on the first polysilicon layer forming a patterned first oxide layer; depositing and patterning a second polysilicon layer on the patterned first oxide layer. A portion of the second polysilicon layer directly contacts a portion of the first polysilicon layer. A portion of the patterned second polysilicon layer corresponds to a bottom electrode. A second oxide layer is deposited on the patterned second polysilicon layer and on an exposed portion of the patterned first oxide layer. A portion of the second oxide layer corresponding to a sensing cavity is etched, exposing the bottom electrode. Another substrate is bonded to the second oxide layer enclosing the sensing cavity. A top electrode is disposed within the another substrate and positioned over the bottom electrode.

A MEMS device is disclosed. The MEMS device includes a first substrate. At least one structure is formed within the first substrate. The first substrate includes at least one first conductive pad thereon. The MEMS device also includes a second substrate. The second substrate includes a passivation layer. The passivation layer includes a plurality of layers. A top layer of the plurality of layers comprises an outgassing barrier layer. At least one second conductive pad and at least one electrode are coupled to the top layer. At least one first conductive pad is coupled to the at least one second conductive pad.