Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

The invention is a process for producing an electromechanical device including a movable portion that is able to deform with respect to a fixed portion. The process implements steps based on fabrication microtechnologies, applied to a substrate including an upper layer, an intermediate layer and a lower layer. These steps are: a) forming first apertures in the upper layer; b) forming an empty cavity in the intermediate layer, which step is referred to as a pre-release step because a central portion of the upper layer lying between the first apertures is pre-released; c) applying what is called a blocking layer to the upper layer, this layer covering the first apertures, the blocking layer and the central portion together forming a suspended microstructure above the empty cavity; d) producing a boundary trench in the suspended microstructure, so as to form, in this microstructure, a movable portion and a fixed portion, the movable portion forming a movable member of the electromechanical device.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Disclosed are methods and devices relating to microelectromechanical systems (MEMS). A method for fabricating a mechanical beam in a microelectromechanical (MEM) device may comprise depositing a masking layer on a first side of a substrate; etching a first notch on the first side of the substrate; forming a beam structure on the substrate, wherein a first portion of the beam structure is coupled to the first notch; etching a second notch at a second portion of the beam structure; depositing an oxide layer on the beam structure, the masking layer, and the substrate; etching a horizontal surface of the oxide layer at the masking layer and the substrate; and releasing the mechanical beam from the substrate, wherein the mechanical beam comprises the beam structure, the oxide layer, and the masking layer.

A resonance device that includes: a first substrate which includes a first silicon substrate and a resonator; a second substrate arranged on a side of the resonator opposite to the first silicon substrate; and a bonding portion bonding the first substrate and the second substrate to each other so as to seal a vibration space of the resonator. The resonator has a silicon film on a surface thereof facing the first silicon substrate. The silicon film is directly bonded to the first silicon substrate in an entire circumferential region surrounding the vibration space in a plan view of the first substrate.

Various embodiments of the present disclosure are directed towards a method for forming an integrated chip, where the method includes forming an interconnect structure over a first substrate. A dielectric structure is formed over the interconnect structure. The dielectric structure comprises opposing sidewalls defining an opening. A conductive bonding structure is formed on a second substrate. A bonding process is performed to bond the conductive bonding structure to the interconnect structure. The conductive bonding structure is disposed in the opening. The bonding process defines a first cavity between inner opposing sidewalls of the conductive bonding structure and a second cavity between the conducive bonding structure and the opposing sidewalls of the dielectric structure.