Patent classifications
B81C2201/0176
MEMS element with increased density
A microelectromechanical device comprising a mobile rotor in a silicon wafer. The rotor comprises one or more high-density regions. The one or more high-density regions in the rotor comprise at least one high-density material which has a higher density than silicon. The one or more high-density regions have been formed in the silicon wafer by filling one or more fill trenches in the rotor with the at least one high-density material. The one or more fill trenches have a depth/width aspect ratio of at least 10, and the one or more fill trenches have been filled by depositing the high-density material into the fill trenches in an atomic layer deposition (ALD) process.
PROCESS FOR MANUFACTURING A MICRO-ELECTRO-MECHANICAL DEVICE FROM A SINGLE SEMICONDUCTOR WAFER AND RELATED MEMS DEVICE
The present disclosure is directed to a process for manufacturing a micro-electro-mechanical system (MEMS) device. The process includes, in part, forming a first sacrificial dielectric region on a semiconductor wafer; forming a structural layer of semiconductor material on the first sacrificial dielectric region; forming a plurality of first openings through the structural layer; forming a second sacrificial dielectric region on the structural layer; forming a ceiling layer of semiconductor material on the second sacrificial dielectric region; forming a plurality of second openings through the ceiling layer; forming on the ceiling layer a permeable layer; selectively removing the first and the second sacrificial dielectric regions; and forming on the permeable layer a sealing layer of semiconductor material.
PIEZOELECTRIC MEMS MICROPHONE WITH SPRING REGION
A piezoelectric microelectromechanical systems microphone is provided comprising a substrate including at least one wall defining a cavity, the at least one wall defining an anchor region around a perimeter, a piezoelectric film layer forming a membrane, the piezoelectric film layer being supported at the anchor region by a spring region, and an electrode disposed over the piezoelectric film layer. A method of manufacturing such a MEMS microphone is also provided.
Vertical nanopore coupled with a pair of transverse electrodes having a uniform ultrasmall nanogap for DNA sequencing
A DNA sequencing device and methods of making. The device includes a pair of electrodes having a spacing of no greater than about 2 nm, the electrodes being exposed within a nanopore to measure a DNA strand passing through the nanopore. The device can be made by depositing a conductive layer over a sacrificial channel and then removing the sacrificial channel to form the electrode gap.
SEMICONDUCTOR PRESSURE SENSOR
A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.
Method and structure for CMOS-MEMS thin film encapsulation
Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.
Micro-sensor body and method for manufacturing the same, as well as micro-sensor
The present disclosure relates to the field of sensor manufacturing technology, particularly discloses a method for manufacturing a micro-sensor body, comprising the steps of S1: applying a wet colloidal material on a substrate to form a colloidal layer, and covering a layer of one-dimensional nanowire film on the surface of the colloidal layer to form a sensor embryo; S2: drying the colloidal layer of the sensor embryo to an extent that the colloidal layer cracks into a plurality of colloidal islands, a portion of the one-dimensional nanowire film contracting into a contraction diaphragm adhered to the surface of the colloidal islands while the other portion of the one-dimensional nanowire film being stretched into a connection structure connected between the adjacent contraction diaphragms. By the method for manufacturing a micro-sensor body of the present disclosure, the contraction diaphragms and connection structures formed by stretching the one-dimensional nanowire film are connected stably, which enhances the stability of the sensor devices; and the cracking manner renders it easy to obtain a large-scale of sensor bodies with connection structure arrays in stable suspension.
Method for fabricating semiconductor device
Disclose is a method for fabricating a semiconductor device. The method includes: forming a groove such as by etching one side surface of a first substrate; attaching a second substrate including a silicon layer on the etched surface of the first substrate formed with the hollow groove; etching the second substrate so as to leave substantially only the silicon layer; forming a thin film structure on the surface of silicon layers of the second substrate; and separating the second substrate formed with the thin film structure from the first substrate. For example, the groove structure may be formed in the lower portion of the device in the process of fabricating the semiconductor device to facilitate the final device separation.
Atomic Layer Deposition Layer for a Microelectromechanical system (MEMS) Device
System and method for forming an ALD assembly on a surface of a microelectromechanical system (MEMS) device comprises a substrate having a surface and the ALD assembly is at least partially disposed on the surface of the substrate, wherein the ALD assembly is at least one of hydrophobic and hydrophilic properties. The ALD layer further includes a first ALD and a second ALD. On the surface of the substrate, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a second deposition cycle. The ALD assembly further comprises a seed layer formed using atomic layer deposition and the ALD layer is at least partially disposed on the seed layer. In one example, the seed layer is formed from alumina (Al.sub.2O.sub.3) and the ALD layer is formed from platinum (Pt). In alternate embodiment, on the seed layer, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a subsequent deposition cycle. The substrate is formed from silicon dioxide (SiO.sub.2).
WATERPROOF MEMBER, MANUFACTURING METHOD OF WATERPROOF MEMBER, PRESSURE SENSOR, AND ELECTRONIC MODULE
A waterproof member includes a laminated body including a second silicon layer and a second silicon oxide layer, and a through hole that is provided in the laminated body, prevents passing of liquid, and allows passing of gas, the through hole includes a first through hole that passes through the second silicon layer, and a second through hole passing through the second silicon oxide layer and communicating with the first through hole, and a width of the second through hole is smaller than a width of the first through hole.