The invention relates to a method for manufacturing a packaging structure 1 comprising a first cavity 300a and a second cavity 300b, both hermetic. The method includes a step of forming over a substrate 100 a first portion 105a of a material capable of releasing a noble gas contained in the material by heating, intended to form a wall of the first cavity 300a; a step of sealing the substrate 100 to a cover 200 to form and hermetically close each of the first and second cavities 300a, 300b; a step of heating the first and second cavities 300a, 300b to release the noble gas contained in the material. The first portion 105a contributes to sealing of the substrate 100 to the cover 200 during the sealing step.

In an example, a MEMS device includes an anti-reflective coating layer formed on a substrate of the MEMS device. The device includes a hinge formed on the substrate, where an edge of the hinge on the substrate is aligned with an edge of the anti-reflective coating layer. The device includes a mirror coupled to the hinge.

In embodiments, a silicon part and a titanium part may be soldered together without breakage or instability. In embodiments, silicon and titanium may be soldered together with a soft solder joint including indium silver, where the temperature excursion between solder solidus and use temperature limits the strain between the two surfaces. In embodiments a silicon micropump surface may be treated to remove its silicon oxide coating, and then TiW, Nickel, and gold layers successively sputtered onto it. A corresponding titanium manifold may be ground flat, and plated with electroless nickel. The nickel plated manifold may then be baked, so as to create a transition from pure Ti to NiTi alloy to pure Ni at the surface of the manifold, and for protection of the upper Ni surface, a layer of gold may be added. The two surfaces may then be soldered in forming gas.

A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate. The micro-nano channels have a high resolution or an ultra-high resolution, and have different sizes and shapes.

The present disclosure relates to a piezoelectric single-crystal element, a MEMS device using same, and a method for manufacturing same, wherein the piezoelectric single-crystal element includes a wafer, a lower electrode stacked on the wafer, a piezoelectric single-crystal thin film stacked on the lower electrode, and an upper electrode stacked on the piezoelectric single-crystal thin film, wherein the piezoelectric single-crystal thin film is composed of PMN-PT, PIN-PMN-PT or Mn:PIN-PMN-PT, and the piezoelectric single-crystal thin film has a polarization direction set to a <001> axis, a <011> axis or a <111> axis, and a MEMS device using same.

According to some implementations, a device is provided, including: a base element, a MEMS sensor provided on the base element, and at least one bond wire electrically coupling the MEMS sensor to the base element. The device further includes a protective coating covering the MEMS sensor, the at least one bond wire and at least part of the base element, and a gel provided on the protective coating.

Monolithic microelectromechanical systems (MEMS) based spatial light modulators (SLM) including ribbon-type modulators and drivers integrally fabricated in or on a common substrate are provided. Generally, the monolithic MEMS-based SLM includes a common electrode in or on a substrate, a number of electrostatically displaceable ribbons, each including a tensile, amorphous silicon-germanium layer (SiGe layer) that serves as a structural layer and as a ribbon electrode, and a light reflective surface on the SiGe layer facing away from the surface on the substrate. A driver including a plurality of drive channels monolithically integrated in the substrate below the surface, the driver electrically coupled to the common electrode and each ribbon electrode and operable to apply voltages thereto to drive the plurality of ribbons to modulate light reflected from the light reflective surfaces.

The present invention relates to an electromechanical switch and a method for manufacturing the same, and more particularly, to a superconducting contact electromechanical switch that reliably operates at an ultra-low temperature (10 to 100 mK) and has low on-state resistance and a method for manufacturing the same.

An electromechanical switch according to an embodiment of the present invention includes: a substrate; a first electrode disposed on the substrate; a second electrode disposed on the substrate; a third electrode disposed on the substrate; and a switch body disposed at a central point surrounded by the first to third electrodes on the substrate. Here, each of the second and third electrodes is spaced a predetermined distance from the first electrode.

A method for fabricating calcite channels in a nanofluidic device is described. A photoresist is coated on a substrate, and a portion of the photoresist is then exposed to a beam of electrons in a channel pattern. The exposed portion of the photoresist is developed to form a channel pattern, and calcite is deposited in the channel pattern using pulsed laser deposition. The photoresist remaining after developing the exposed portion of the photoresist is removed.

A micro-electromechanical system (MEMS) device includes a silicon substrate; and a Tantalum (Ta) layer comprising a first portion and a second portion, a first portion being suspended over the silicon substrate and configured to move relative to the silicon substrate, and the second portion of the structure being coupled to the silicon substrate and fixed in place relative to the silicon substrate.