MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

Provided is: a layered body wherein a sheet surface has slight adhesiveness, enabling easy temporary securing of a semiconductor chip, or the like, that has been diced, onto a semiconductor substrate, and wherein permanent adhesion to an adhered object is expressed through post-curing; a layered body that includes the same; a semiconductor device that uses the same; and a method for manufacturing the semiconductor device. A silicone-based adhesive sheet is disclosed herein, wherein, prior to heating, the delamination mode of the adhesive surface from a non-adhesive substrate is interfacial delamination, and after heating of the adhesive surface in a range of between 50 and 200? C., the delamination mode of the adhesive surface from another non-adhesive substrate changes to cohesive fracturing, and exhibits permanent adhesion.

A recess is formed in one silicon substrate. A silicon oxide film is formed in another one silicon substrate at a portion space apart from a space-to-be-formed region. The silicon oxide film has a groove surrounding the space-to-be-formed region and extending to an outer periphery of the other one silicon substrate. Further, the other one silicon substrate and the one silicon substrate are directly bonded to each other via the silicon oxide film so as to cover the groove. A gas discharge passage, a stacking structure of the silicon substrates and the silicon oxide film are formed, and the space is formed inside the stacking structure by the recess. Then, by the heat treatment, the gas inside the space is discharged to the outside of the stacking structure through the gas discharge passage.

An ultrasound device includes: ultrasonic transducer cavities; a membrane comprising a silicon layer that seals the ultrasonic transducer cavities; electrode regions configured to control vibration of the membrane; and a complementary metal-oxide-semiconductor (CMOS) substrate including integrated circuitry that is electrically coupled to the electrode regions. The ultrasonic transducer cavities are disposed between the membrane and the integrated circuitry along a vertical direction of the ultrasound device.

The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.

Disclosed is a flexible electronic circuit substrate that includes a device that is fabricated from layers of the flexible electronic circuit substrate as part of construction of the flexible electronic circuit substrate. Such devices could be functional units such as micro electro mechanical devices (MEMS) devices such as micro-accelerometer sensor elements, micro flow sensors, micro pressure sensors, etc.

Disclosed is a force transfer device that includes a first body that has a first body frame that defines a first chamber and at least one gear element. The gear element has a central gear element region. A first membrane is affixed to a surface of the first body frame, the membrane covering the chamber and having an annular aperture enclosing a central region of the membrane that is affixed to the central gear element region of the gear element. The disclosed force transfer device can be axle or shaft based. Also disclosed in a micro electrostatic motor that includes a motor body having a first and a second face, the motor body defining a chamber and a rotor having a central region. A membrane is disposed over the first face of the motor body, the membrane supporting a pair of spaced electrodes that are electrically isolated by a gap, the membrane having an annular aperture that defines a central region of the membrane that is coupled to the central region of the rotor. The force transfer device can be driven by the electrostatic motor.

Disclosed is a micro electrostatic motor that includes a body having a first and a second face and having a chamber. A first membrane is disposed over the first face of the body and a rotatable disk is disposed in the circular chamber about a member. The disk is disposed in the circular chamber and is free to rotate about the member. The disk has on a first surface thereof a set of three mutually electrically isolated electrodes, with each of the electrodes having a tab portion and being electrically isolated from the member. A second membrane is disposed over the second face of the body and a pair of spaced electrodes are provided on portions of the second membrane, with the pair of spaced electrodes being isolated by a gap between the pair of electrodes. A cylindrical shaped member is disposed in the chamber electrically isolated from the three mutually electrically isolated electrodes on the disc.

The present disclosure provides a CMOS MEMS device. The CMOS MEMS device includes a first substrate, a second substrate, a first polysilicon and a second polysilicon. The second substrate includes a movable part and is located over the first substrate. The first polysilicon penetrates the second substrate and is adjacent to a first side of the movable part of the second substrate. The second polysilicon penetrates the second substrate and is adjacent to a second side of the movable part of the second substrate.

The present invention has as its object the provision of a method of bonding substrates, which can bond two substrates, at least one of which has warpage and undulation of a bonding surface, in a high adhesion state and a method of producing a microchip. In the method of bonding substrates according to the present invention, the first substrate is formed of a material having a deformable temperature at which the substrate deforms and which is higher than a deformable temperature of the second substrate, the method includes: a surface activation step of activating each of bonding surfaces of the first substrate and the second substrate; a stacking step of stacking the first substrate and the second substrate so that the respective bonding surfaces thereof are in contact with each other; and a deforming step of deforming the bonding surface of the second substrate to conform to a shape of the bonding surface of the first substrate, and the deforming step is performed by heating the stacked body of the first substrate and the second substrate obtained in the stacking step at a temperature not lower than the deformable temperature of the second substrate and lower than the deformable temperature of the first substrate.