A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH.sub.2 species. This may be accomplished by exposing the bonding layer to an NH.sub.4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.

A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH.sub.2 species. This may be accomplished by exposing the bonding layer to an NH.sub.4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.

In a first aspect, the invention relates to a method for producing a gas-filled reference chamber which is hermetically sealed. Thereby, the gas with which the reference chamber is filled is introduced via an opening in a separate coating chamber only after bonding of the wafers forming the reference chamber. The reference chamber preferably contains MEMS devices.

In another aspect, the invention relates to a photoacoustic gas sensor comprising such a reference chamber within which a MEMS sensor is present.

A packaging technology for MECS components, which allows the realization of extremely robust components which are resistant to high temperatures and media. Such a component includes at least one micro-electrochemical sensor (MECS) component having a diaphragm, which is developed in a layer construction on the substrate of the component and spans an opening in the substrate rear side, and a carrier for the mounting and electrical contacting of the MECS component on an application circuit board. The MECS component is bonded to the carrier in flip chip technology, so that a hermetically tight mechanical connection between the top surface of the MECS component and the carrier surface exists at least in one connection region, and an electric connection between the MECS component and the carrier exists in at least one contact area.

A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH.sub.2 species. This may be accomplished by exposing the bonding layer to an NH.sub.4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.

The present invention has as its object the provision of a method of bonding substrates, which can bond two substrates, at least one of which has warpage and undulation of a bonding surface, in a high adhesion state and a method of producing a microchip.

In the method of bonding substrates according to the present invention, the first substrate is formed of a material having a deformable temperature at which the substrate deforms and which is higher than a deformable temperature of the second substrate, the method includes: a surface activation step of activating each of bonding surfaces of the first substrate and the second substrate; a stacking step of stacking the first substrate and the second substrate so that the respective bonding surfaces thereof are in contact with each other; and a deforming step of deforming the bonding surface of the second substrate to conform to a shape of the bonding surface of the first substrate, and the deforming step is performed by heating the stacked body of the first substrate and the second substrate obtained in the stacking step at a temperature not lower than the deformable temperature of the second substrate and lower than the deformable temperature of the first substrate.

Provided is a PCB speaker and a method for micromachining the speaker diaphragm on PCB substrate, the method for micromachining the speaker diaphragm on PCB substrate comprises: providing metal paths and at least one through hole on the PCB substrate; providing a patterned sacrificial layer on the PCB substrate, the sacrificial layer covering all the through holes on the PCB substrate; providing a diaphragm layer on the sacrificial layer through depositing, mounting or laminating, the diaphragm layer covering the sacrificial layer and electrically connected with the metal paths on the PCB substrate, thereby forming a diaphragm layer; and releasing the sacrificial layer and the diaphragm layer remains. With the micromachining method for the above PCB substrate and the diaphragm, the production cost of the speaker can be lowered, and the reliability of the product can be improved at the same time.

In a method of inferring ambient atmospheric temperature, an acoustic signal is emitted from a speaker. A first sample of the acoustic signal is captured with a first microphone spaced a first distance from the speaker. A second sample of the acoustic signal is captured with a second microphone spaced a second distance from the speaker. The second distance is greater than the first distance, and a difference between the first distance and the second distance is a known third distance. A time delay in the acoustic signal is determined between the first sample and the second sample. An ambient temperature of the atmosphere through which the acoustic signal traveled is inferred based on a relationship between the time delay and temperature for the acoustic signal over the third distance.

A pressure sensor device comprises a substrate body, a pressure sensor comprising a membrane, and a cap body comprising at least one opening. The pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to the main plane of extension of the substrate body, and the mass of the substrate body equals approximately the mass of the cap body. Furthermore, a method for forming a pressure sensor device is provided.

A method for fabricating a symmetrical MEMS accelerometer. For each half, etch multiple holes on the bottom of an SOI wafer; form multiple hollowed parts on the top of a silicon wafer; form silicon dioxide on the top and bottom of the silicon wafer; bond the top of the silicon wafer with the bottom of the SOI wafer; deposit silicon nitride on the bottom of the silicon wafer, remove parts of the silicon nitride and silicon dioxide to expose the bottom of the silicon wafer; etch the exposed bottom of the silicon wafer; reduce the thickness of the SOI wafer; remove the silicon nitride and exposed bottom. Bond the two halves along their bottom surface to form the accelerometer. Form a bottom cap including electrodes. Bond the bottom cap and the accelerometer. Deposit metal on top of the silicon wafer.