Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The method includes bonding a MEMS substrate to a carrier substrate. The epitaxial layer is formed over the MEMS substrate, where the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts is formed over the epitaxial layer.

The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

The technology of this application relates to an encapsulation structure that includes a micro-electromechanical system (MEMS) device, a substrate, and an attachment material. Materials included in the substrate include at least a first-type material and a second-type material, a coefficient of thermal expansion of the first-type material is less than a coefficient of thermal expansion of a base material of the MEMS device, and a coefficient of thermal expansion of the second-type material is greater than the coefficient of thermal expansion of the base material of the MEMS device. The attachment material is located between the MEMS device and the substrate, and is configured to attach the MEMS device to the substrate. The substrate includes a plurality of different materials.

Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

A method includes forming a bumpstop from a first intermetal dielectric (IMD) layer and forming a via within the first IMD, wherein the first IMD is disposed over a first polysilicon layer, and wherein the first polysilicon layer is disposed over another IMD layer that is disposed over a substrate. The method further includes depositing a second polysilicon layer over the bumpstop and further over the via to connect to the first polysilicon layer. A standoff is formed over a first portion of the second polysilicon layer, and wherein a second portion of the second polysilicon layer is exposed. The method includes depositing a bond layer over the standoff.

A device includes a substrate and an intermetal dielectric (IMD) layer disposed over the substrate. The device also includes a first plurality of polysilicon layers disposed over the IMD layer and over a bumpstop. The device also includes a second plurality of polysilicon layers disposed within the IMD layer. The device includes a patterned actuator layer with a first side and a second side, wherein the first side of the patterned actuator layer is lined with a polysilicon layer, and wherein the first side of the patterned actuator layer faces the bumpstop. The device further includes a standoff formed over the IMD layer, a via through the standoff making electrical contact with the polysilicon layer of the actuator and a portion of the second plurality of polysilicon layers and a bond material disposed on the second side of the patterned actuator layer.

In an embodiment a method for forming a pressure sensor device includes providing a pressure sensor on a substrate body, the pressure sensor comprising a membrane, depositing a top layer on top of the substrate body and the pressure sensor, connecting a cap body with the top layer, a mass of the cap body being approximately equal to a mass of the substrate body and introducing at least one opening in the cap body.

An integrated circuit assembly including a first wafer bonded to a second wafer with an oxide layer, wherein a first surface of the first wafer is bonded to a first surface of the second wafer. The assembly can include a bonding oxide on a second surface of the second wafer, wherein a surface of the bonding oxide is polished. The assembly can further include a shim secured to the bonding oxide on the second surface of the second wafer to reduce bow of the circuit assembly.

Provided are integrated analysis devices having features of macroscale and nanoscale dimensions, and devices that have reduced background signals and that reduce quenching of fluorophores disposed within the devices. Related methods of manufacturing these devices and of using these devices are also provided.

Disclosed is a force transfer device that includes a first body that has a first body frame that defines a first chamber and at least one gear element. The gear element has a central gear element region. A first membrane is affixed to a surface of the first body frame, the membrane covering the chamber and having an annular aperture enclosing a central region of the membrane that is affixed to the central gear element region of the gear element. The disclosed force transfer device can be axle or shaft based. Also disclosed in a micro electrostatic motor that includes a motor body having a first and a second face, the motor body defining a chamber and a rotor having a central region. A membrane is disposed over the first face of the motor body, the membrane supporting a pair of spaced electrodes that are electrically isolated by a gap, the membrane having an annular aperture that defines a central region of the membrane that is coupled to the central region of the rotor. The force transfer device can be driven by the electrostatic motor.