The present invention is directed to the synthesis of metallic nickel-molybdenum-tungsten films and coatings with direct current sputter deposition, which results in fully-dense crystallographically textured films that are filled with nano-scale faults and twins. The as-deposited films exhibit linear-elastic mechanical behavior and tensile strengths above 2.5 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultra-high strength is attributed to a combination of solid solution strengthening and the presence of the dense nano-scale faults and twins. These films also possess excellent thermal and mechanical stability, high density, low CTE, and electrical properties that are attractive for next generation metal MEMS applications. Deposited as coatings these films provide protection against friction and wear. The as-deposited films can also be heat treated to modify the internal microstructure and attendant mechanical properties in a way that provides a desired balance of strength and toughness.

A method comprises: patterning a substrate, including a conductive region, with photoresist exposed by lithography, where the substrate is mounted on a handle substrate; forming a comb structure with conductive fingers on the substrate by at least removing a portion of the conductive region of the substrate; removing the photoresist; forming, one atomic layer at a time, at least one atomic layer of at least one conductor over at least one sidewall of each conductive finger; attaching at least one insulator layer to the comb structure, and the substrate from which the comb structure is formed; and removing the handle substrate.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a pillar structure, a fin structure, and a buffering structure. The pillar structure is disposed on the substrate. The fin structure is connected to the pillar structure and is separate from the substrate. The buffering structure is disposed in the fin structure and includes a soft material layer and an air gap surrounded by the soft material layer. A method of manufacturing the semiconductor structure is also provided.

The present invention provides an implantable microneedle and a manufacturing method therefor. An implantable microneedle according to the present invention comprises a coating layer for covering at least one part of the surface of a tip part of the microneedle. When exposed to moisture, the coating layer can be separated from the tip part of the microneedle and thus be implanted.

An implantable microneedle and a manufacturing method therefor is disclosed. The implantable microneedle includes a coating layer for covering at least one part of the surface of a tip part of the microneedle. When exposed to moisture, the coating layer can be separated from the tip part of the microneedle and thus be implanted.

A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. The holding structure includes a holding portion extending from the two-dimensional layer towards the carrier beyond the at least a portion of the two-dimensional layer spaced apart from the carrier.

A method for making ion-crystal semiconductor material based micro- and/or nanowires, MNWs, embedded into a semiconductor substrate, includes forming a structure into the semiconductor substrate, wherein the structure has each of a width and a depth less than 10 ?m; pumping an ion-crystal semiconductor material as an ion solution into the structure, wherein the pumping is achieved exclusively due to capillary forces; flowing the ion solution through the structure to fill the structure; crystallizing the ion-crystal semiconductor material inside the structure to form the MNWs; and adding electrodes to ends of the MNWs.

A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body on a substrate, and a cantilever beam connected to the substrate and the first film body; forming a sacrificial layer on the first film body and the cantilever beam; patterning the sacrificial layer located on the first film body to manufacture a recessed portion used for forming a support structure, the bottom of the recessed portion being exposed of the first film body; depositing a dielectric layer on the sacrificial layer; patterning the dielectric layer to manufacture a second film body and the support structure, the support structure being connected to the first film body and the second film body; and removing the sacrificial layer to obtain the MEMS double-layer suspension microstructure.

In an example of a method for making a nano-structure, an aluminum layer is partially anodized to form a porous anodic alumina structure. The aluminum layer is positioned on an oxidizable material layer. The porous anodic alumina structure is exposed to partial anisotropic etching to form tracks within the porous anodic alumina structure. A remaining portion of the aluminum layer is further anodized to form paths where the tracks are formed. The oxidizable material layer is anodized to from an oxide, where the oxide grows through the paths formed within the porous anodic alumina structure to form a set of super nano-pillars.

An integration of silicon carbide (SiC) pressure sensor and a temperature sensor on a single SiC substrate to facilitate the simultaneous measurement of pressure and temperature at temperature, and a method of fabricating the same.