The present invention provides a method for manufacturing a thermal bimorph diaphragm and a MEMS speaker with thermal bimorphs, wherein the method comprises the steps of: thermally oxidizing a substrate to obtain an insulating layer thereon and providing a metal layer on the insulating layer; providing a sacrificial layer on the metal layer; providing a first thermal bimorph layer on the sacrificial layer; providing a second thermal bimorph layer on the first thermal bimorph layer; providing a metal connecting layer at the positions on the metal layer where the sacrificial layer is not provided; forming corresponding back holes on the substrate and the insulating layer and releasing the sacrificial layer; forming the thermal bimorph diaphragm which is warped with the first thermal bimorph layer and the second thermal bimorph layer after the sacrificial layer is released.

Microstructure plating systems and methods are described herein. One method includes depositing a plating-resistant material between a microstructure and a bonding layer, wherein the microstructure comprises a plating process base material and immersing the microstructure in a plating solution.

A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a pillar structure, a fin structure, and a buffering structure. The pillar structure is disposed on the substrate. The fin structure is connected to the pillar structure and is separate from the substrate. The buffering structure is disposed in the fin structure and includes a soft material layer and an air gap surrounded by the soft material layer. A method of manufacturing the semiconductor structure is also provided.

A semiconductor structure includes a substrate, a fixed member disposed on the substrate, a floating member connected to the fixed member, and a buffering structure disposed in the floating member. The floating member is separated from the substrate. The floating member includes a first conductive layer and a second conductive layer over the first conductive layer. The buffering structure includes a soft material layer and an air gap surrounded by the soft material layer. The second conductive layer is separated from the air gap.

A micro-electro-mechanical system (MEMS) device includes a supporting substrate, a cavity disposed in the supporting substrate, a stopper, and a MEMS structure. The stopper is disposed between the supporting substrate and the cavity, and an inner sidewall of the stopper is in contact with the cavity. The stopper includes a filling material surrounding a periphery of the cavity, and a liner wrapping around the filling material. The MEMS structure is disposed over the cavity and attached on the stopper and the supporting substrate.

A MEMS device includes a substrate having a front surface and a rear surface, a recess formed in the front surface of the substrate, and a movable electrode and a fixed electrode connected to the substrate and disposed in such a manner as to face each other in the air above the recess. The movable electrode includes an embedded oxide layer embedded in a trench formed in the movable layer. A manufacturing method of a MEMS device includes forming a trench by etching the front surface of the substrate, and forming the embedded oxide layer in the trench by oxidating side surfaces and bottom surface of the trench.

A device includes one or more layers of a microelectromechanical system (MEMS) structure and a dielectric stack over the one or more layers. The dielectric stack includes a first dielectric layer having a first index of refraction, and a second dielectric layer having a second index of refraction different than the first index of refraction.

A method of fabricating a micro-electro-mechanical system (MEMS) device, the steps include: providing a supporting substrate; etching the supporting substrate to form a trench, where the trench surrounds a portion of the supporting substrate; forming a liner in the trench; filling up the trench with a filling material to form a stopper, wherein the stopper comprises the liner and the filling material; forming a MEMS structure on the stopper and the supporting substrate, wherein the MEMS structure includes a through hole; and etching a portion of the supporting substrate to form a cavity by providing an etchant through the through hole, wherein the stopper is in contact with the cavity.