Patent classifications
B81C2203/019
Compression and cold weld sealing method for an electrical via connection
Compression cold welding methods, joint structures, and hermetically sealed containment devices are provided. The method includes providing a first substrate having at least one first joint structure which comprises a first joining surface, which surface comprises a first metal; providing a second substrate having at least one second joint structure which comprises a second joining surface, which surface comprises a second metal; and compressing together the at least one first joint structure and the at least one second joint structure to locally deform and shear the joining surfaces at one or more interfaces in an amount effective to form a metal-to-metal bond between the first metal and second metal of the joining surfaces. Overlaps at the joining surfaces are effective to displace surface contaminants and facilitate intimate contact between the joining surfaces without heat input. Hermetically sealed devices can contain drug formulations, biosensors, or MEMS devices.
OPTIMIZED EPOXY DIE ATTACH GEOMETRY FOR MEMS DIE
A differential pressure sensor may include a body with a first end, second end and wall wherein the first and second ends comprise isolator diaphragms connected to first and second process fluid inlets. A MEMS pressure sensor including a pressure sensing diaphragm with first and second sides may be mounted on a hollow pedestal adhesively attached to an annular bottom of a cylindrical cavity wherein the first side of the sensor is coupled to the first isolator diaphragm by a first fill fluid and the second side of the sensor is coupled to the second isolator diaphragm through the interior of the hollow pedestal by a second fill fluid volume wherein the first and second fill fluid volumes are separated by an adhesive seal between the bottom of the cylindrical cavity and the bottom of the hollow pedestal wherein the cylindrical cavity comprises a first cylindrical wall with a first diameter in contact with the annular bottom, a frustroconical portion in contact with the first cylindrical wall and in contact with a second cylindrical wall with a second diameter larger than the first diameter such that the increased distance between the pedestal and the cylindrical wall prevents adhesive moving up the space between the pedestal and cavity wall from the bottom of the cavity when the pressure sensor and hollow pedestal are mounted in the cavity. The sensor further includes sensor elements on the MEMS diaphragm that provide an indication of pressure differences between the first and second process fluids.
Method for encapsulating a microelectronic device, comprising a step of thinning the substrate and/or the encapsulation cover
A method for encapsulating a microelectronic device, arranged on a support substrate, with an encapsulation cover includes, inter alia, the following sequence of steps: a) providing a support substrate on which a microelectronic device is arranged, b) depositing a bonding layer on the first face of the substrate, around the microelectronic device, c) positioning an encapsulation cover on the bonding layer in such a way as to encapsulate the microelectronic device, d) thinning the second main face of the support substrate and the second main face of the encapsulation cover by chemical etching.
Seal for microelectronic assembly
Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.
Bonded structures
A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.
Transducer package with integrated sealing
A package which comprises a carrier, a transducer mounted on the carrier and configured for converting between a package-external property and an electric signal, a package housing at least partially housing at least one of the carrier and the transducer, and a sealing which forms at least part of the package housing for sealing between the package and a package-external body.
ELECTRO-OPTIC DEVICE, ELECTRONIC APPARATUS, AND METHOD OF MANUFACTURING ELECTRO-OPTIC DEVICE
In an electro-optic device, a chip provided with a mirror and a drive element adapted to drive the mirror, a cover having a light-transmitting property and adapted to cover the mirror in a planar view, and a spacer located between the cover and the chip are disposed on an interconnection board. Further, a boundary between the cover and the spacer, a boundary between the chip and the spacer, and a part of the interconnection board are covered with an inorganic film such as an aluminum oxide film. The inorganic film also covers a part of a chip-side terminal and an internal terminal, and a conductive member.
STABILIZED TRANSIENT LIQUID PHASE METAL BONDING MATERIAL FOR HERMETIC WAFER LEVEL PACKAGING OF MEMS DEVICES
In described examples, a transient liquid phase (TLP) metal bonding material includes a first substrate and a base metal layer. The base metal layer is disposed over at least a portion of the first substrate. The base metal has a surface roughness (Ra) of between about 0.001 to 500 nm. Also, the TLP metal bonding material includes a first terminal metal layer that forms an external surface of the TLP metal bonding material. A metal fuse layer is positioned between the base metal layer and the first terminal metal layer. The TLP metal bonding material is stable at room temperature for at least a predetermined period of time.
Methods of fabricating micro electro mechanical system structures
A method of fabricating a micro electro mechanical system (MEMS) structure includes providing a first substrate structure including a bonding pad structure. The bonding pad structure has at least one recess therein. A second substrate structure is provided and bonded with the bonding pad structure of the first substrate structure.
Molded Cavity Package with Embedded Conductive Layer and Enhanced Sealing
A base plate with a first side having an elevated portion, a recessed portion laterally surrounding the elevated portion, and a vertical face extending from the recessed portion to the elevated portion is provided. At least a part of the vertical face is covered with a metal layer. A mold compound structure is formed on the first side with the metal layer disposed between the first side and the mold compound structure such that the mold compound structure includes an elevated portion laterally surrounding a recessed portion, and opposing edge faces that vertically extend from the recessed portion to the elevated portion. At least a part of the base plate is subsequently removed such that the recessed portion of the mold compound structure is uncovered from the base plate and such that the metal layer remains on at least one uncovered section of the mold compound structure.