An apparatus includes a MEMS wafer with a device layer and a handle substrate bonded to the device layer. The apparatus also includes a CMOS wafer including an oxide layer, and a passivation layer overlying the oxide layer. A bonding electrode overlies the passivation layer and a bump stop electrode overlies the passivation layer. A eutectic bond is between a first bonding metal on the bonding electrode and a second bonding metal on the MEMS wafer. A sensing electrode is positioned adjacent to the bump stop electrode and the bonding electrode. A sensing gap is positioned between the sensing electrode and the device layer, wherein the sensing gap is greater than a bump stop gap positioned between the bump stop electrode and the device layer.

A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.

A method of removing an oxide layer is provided. A metal layer is deposited over an oxide layer formed at a top surface of a germanium substrate. A metal oxide layer is deposited over the metal layer. The metal oxide layer includes a same metal material as the metal layer. The metal layer and the oxide layer are reacted and combined with the metal oxide layer to form a dielectric layer during an anneal process. During the anneal process, the oxide layer is reacted with the metal layer and removed.

Disclosed a MEMS assembly and a manufacturing method thereof. The manufacturing method comprises: forming a groove on a sensor chip; forming a bonding pad on a circuit chip; bonding the sensor chip and the circuit chip together to form a bonding assembly; performing a first dicing process at a first position of the sensor chip to penetrate through the sensor chip to the groove; performing a second dicing process at a second position of the sensor chip to penetrate through the sensor chip and the circuit chip, for obtaining an individual MEMS assembly by singulating the bonding assembly, wherein location of the groove corresponds to a position of the bonding pad, and an opening is formed in the sensor chip to expose the bonding pad when the second dicing process is performed. The method uses two dicing process respectively achieving different depths to expose the bonding pad of the sensor chip and singulate the MEMS assembly, respectively, to improve yield and reliability.

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

A method is disclosed. In one example, the method includes bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel. The method further includes bonding a second panel of a second material to at least one of the base panel and the first panel, wherein multiple second cavities are formed between the second panel and the at least one of the base panel and the first panel.

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

A structure of micro-electro-mechanical-system (MEMS) microphone package includes a packaging substrate and an integrated circuit disposed on the packaging substrate. In addition, a MEMS microphone is disposed on the packaging substrate, wherein the MEMS microphone is electrically connected to the integrated circuit. A conductive adhesion layer is disposed on the packaging substrate, surrounding the integrated circuit and the MEMS microphone. A cap structure has a bottom part being adhered to the conductive adhesion layer. An underfill layer is disposed on the packaging substrate, covering an outer side of the conductive adhesion layer.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.

The invention relates to an infrared device comprising a resistive element suspended in a cavity formed in a main element, and capable of transmitting infrared radiation when it is fed with an electric current. In particular, the main element is at least partly covered on the outer surface thereof and/or the inner surface thereof with a reflective coating. The use of the reflective coating makes it possible to at least partly contain infrared radiation transmitted by the resistive element in the cavity.