A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device including a conductive bonding structure disposed between a substrate and a MEMS substrate. An interconnect structure overlies the substrate. The MEMS substrate overlies the interconnect structure and includes a moveable membrane. A dielectric structure is disposed between the interconnect structure and the MEMS substrate. The conductive bonding structure is sandwiched between the interconnect structure and the MEMS substrate. The conductive bonding structure is spaced laterally between sidewalls of the dielectric structure. The conductive bonding structure, the MEMS substrate, and the interconnect structure at least partially define a cavity. The moveable membrane overlies the cavity and is spaced laterally between sidewalls of the conductive bonding structure.

A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

A semiconductor package includes a first die having a first surface, a first conductive bump over the first surface and having first height and a first width, a second conductive bump over the first surface and having a second height and a second width. The first width is greater than the second width and the first height is substantially identical to the second height. A method for manufacturing the semiconductor package is also provided.

A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.

The present invention relates to a sensor arrangement, to a corresponding method of assembling such a sensor arrangement, and to a sensor system. The sensor arrangement comprises at least one transducer element for monitoring at least one measurand and generating an electrical output signal correlated with the at least one measurand; and a sensor substrate comprising the transducer element. The sensor substrate is mountable on a circuit carrier in a way that a media channel penetrating the circuit carrier allows access of the at least one measurand to the transducer element. The circuit carrier has an electrically conductive solderable first sealing pattern which surrounds the media channel at least partly and which is aligned with a solderable second sealing pattern arranged on the sensor substrate, so that a soldered sealing connection, which at least partly surrounds the media channel, is formed between the first sealing pattern and the second sealing pattern.

A MEMS device is disclosed. In an embodiment a MEMS device includes a substrate having an active region and at least one integrated electrical and mechanical connection element configured to electrically and mechanically mount the MEMS device to a carrier, wherein the connection element comprises a stress-reducing structure.

A device having both an electronic assembly having an electronic component assembled on a first substrate, and also a body defining a cavity having a first end in fluid flow communication with a fluid, the electronic component extending inside the cavity and the first substrate including a portion in contact with a wall of the cavity. The coefficient of thermal expansion of the material of the first substrate is less than that of the electronic component, and the electronic component is assembled on the first substrate by a brazing type assembly method involving the application of heat. A method of making an electronic assembly. An assembly obtained by the method.

A method of making a flowcell includes bonding a first surface of an organic solid support to a surface of a first inorganic solid support via a first bonding layer, wherein the organic solid support includes a plurality of elongated cutouts. The method further includes bonding a surface of a second inorganic solid support to a second surface of the organic solid support via a second bonding layer, so as to form the flowcell. The formed flowcell includes a plurality of channels defined by the surface of the first inorganic solid support, the surface of the second inorganic solid support, and walls of the elongated cutouts.