A method for producing a plurality of sensor devices. The method includes: furnishing a substrate having contact points in a plurality of predetermined regions for sensor chips; disposing the sensor chips in the predetermined regions on the substrate, and electrically contacting the sensor chips to the contact points; attaching a frame structure with an adhesive material on the substrate and between the sensor chips, the frame structure proceeding laterally around the sensor chips, the frame structure extending, after attachment, vertically beyond the sensor chips and forming a respective cavity for at least one of the sensor chips, and a membrane spanning at least one of the cavities for the sensor chips so as to cover it; and singulating the substrate, or the frame structure and the substrate, around the respective cavities into several sensor devices.

A resonance device that includes a MEMS substrate including a resonator, an upper lid that seals a vibration space of the resonator, and a ground portion positioned between the MEMS substrate and the upper lid, the ground portion being extended to an inside of the upper lid and electrically connected to the upper lid.

Systems and methods to integrate electrical sensors comprising parallel electrodes into microfluidic devices that are manufactured using soft lithography are disclosed herein. With minimal fabrication complexity, more uniform electric fields than conventional coplanar electrodes are produced. The methods disclosed are also more suitable for the construction of complex electrical sensor networks in microfluidic devices due to greater layout flexibility and provide improved sensitivity over conventional coplanar electrodes.

A wafer-level integrated thermal detector comprises a first wafer and a second wafer (W1, W2) bonded together. The first wafer (W1) includes a dielectric or semiconducting substrate (100), a dielectric sacrificial layer (102) deposited on the substrate, a support layer (104) deposited on the sacrificial layer or the substrate, a suspended active element (108) provided within an opening (106) in the support layer, a first vacuum-sealed cavity (110) and a second vacuum-sealed cavity (106) on opposite sides of the suspended active element. The first vacuum-sealed cavity (110) extends into the sacrificial layer (102) at the location of the suspended active element (108). The second vacuum-sealed cavity (106) comprises the opening of the support layer (104) closed by the bonded second wafer. The thermal detector further comprises front optics (120) for entrance of radiation from outside into one of the first and second vacuum-sealed cavities, aback reflector (112) arranged to reflect radiation back into the other one of the first and second vacuum-sealed cavities, and electrical connections (114) for connecting the suspended active element to a readout circuit (118).

A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

Apparatus and methods for forming MEMS structures that minimize bending with temperature change due to differences in the coefficient of thermal expansion for different layers of the MEMS structures. In particular, shown is forming a compensating reflectivity coating on the underside of a suspended MEMS structure to offset bending by a reflectivity coating on a top side of the suspended MEMS structure. The reflectivity coating can be either a reflective coating, or a non-reflective (anti-reflective) coating. The method includes forming a cavity on a first wafer, forming the compensating reflective coating on a second wafer substrate that will become the suspended MEMS structure, then flipping the second wafer over and bonding the two wafers together.

A support structure for a micro-vibrator includes: a micro-vibrating body having a curved surface portion and a recess recessed from the curved surface portion; and a support member having a rod and an adhesive member arranged at a tip end of the rod. The support member is adhered on a connecting surface of the recess through the adhesive member. The connecting surface of the recess is an internal bottom surface of the recess.

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.

A silicon substrate having a first silicon substrate having a first surface with a cavity and a second surface opposite the first surface; a first silicon oxide film having a thickness d1 on the first surface; a second silicon oxide film having a thickness d2 on a bottom of the cavity; and a third silicon oxide film having a thickness d3 on the second surface, where d1≤d3 and d1<d2, or d3<d1 and d2<d1.