A wafer-level package for micro-acoustic devices and a method of manufacture is provided. The package comprises a base wafer with electric device structures. A frame structure is sitting on top of the base wafer enclosing particular device areas for the micro-acoustic devices. A cap wafer provided with a thin polymer coating is bonded to the frame structure to form a closed cavity over each device area and to enclose within the cavity the device structures arranged on the respective device area.

The present disclosure relates to micro-electromechanical system (MEMS) package that uses polysilicon inter-tier connections to provide for a low parasitic capacitance in MEM device signals, and a method of formation. In some embodiments, the MEMS package has a CMOS substrate with one or more semiconductor devices arranged within a semiconductor body. A MEMS substrate having an ambulatory element is connected to the CMOS substrate by a conductive bonding structure. The conductive bonding structure is arranged on a front-side of the MEMS substrate at a location laterally offset from the ambulatory element. One or more polysilicon vias extend through the conductive MEMS substrate to the bonding structure. The one or more polysilicon vias are configured to electrically couple the MEMS substrate to the CMOS substrate. By connecting the MEMS substrate to the CMOS substrate using the polysilicon vias, the parasitic capacitance and form factor of the MEMS package are reduced.

The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.

A microfluidic device includes first and second outer layers each having one or more microfluidic formations and an intermediate layer bonded between the first and second outer layers; in which the glass transition temperature of the first outer layer is higher than the glass transition temperature of the second outer layer.

A microelectromechanical system (MEMS) ambient pressure and acoustic sensor including an enclosure having an enclosure wall that defines an interior chamber and an acoustic input opening to the interior chamber, a moving structure positioned within the interior chamber and being acoustically coupled to the acoustic input opening. The moving structure having an acoustic sensing portion that is movable in response to an acoustic pressure input and an ambient pressure sensing portion that is movable in response to an ambient pressure input. The sensor further including a circuit electrically coupled to the moving structure and that is operable to determine an acoustic output and an ambient pressure output based on a movement of the moving structure.

A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a recess in a first substrate and forming a dielectric layer on the first substrate and in the recess. The method also includes forming a second substrate on the dielectric layer and etching a portion of the second substrate to form a MEMS structure. The MEMS structure has a plurality of openings. The method further includes etching a portion of the dielectric layer to form a cavity below the openings.

After forming a microelectromechanical-system (MEMS) resonator within a silicon-on-insulator (SOI) wafer, a complementary metal oxide semiconductor (CMOS) cover wafer is bonded to the SOI wafer via one or more eutectic solder bonds that implement respective paths of electrical conductivity between the two wafers and hermetically seal the MEMS resonator within a chamber.

A MEMS sensor includes a bond portion in which a metal structure in a device substrate and a metal laminate are eutectically bonded. The bond portion bonds the device substrate and a lid substrate. The metal laminate is located on a main surface of the lid substrate and facing an exposed portion in the metal structure. The metal laminate includes a first metal and a second metal different from the first metal.

Provided herein is a method including forming a micro-electro-mechanical system (MEMS) wafer including a first MEMS device and a second MEMS device. A complementary metal-oxide semiconductor (CMOS) wafer is formed including a first electrically conductive via and a second electrically conductive via. A layer stack including a first conductive layer, a second conductive layer, and a bond layer is deposited over the first electrically conductive via and the second electrically conductive via. The layer stack is etched to define a first standoff, a second standoff, a third standoff, a first bump stop over the first electrically conductive via, and a second bump stop over the second electrically conductive via. The first bump stop and the second bump stop are etched to remove the bond layer. The first bump stop is further etched to remove the second conductive layer. The MEMS wafer is bonded to the CMOS wafer.

A microfluidic circuit element comprising a microfluidic main channel and nano interstices is disclosed. The nano interstices are formed at both sides of the main channel and are in fluid communication with the main channel. The nano interstices have a height less than that of the main channel, gives more driving force of the microfluidic channel and provides stable flow of a fluid. The microfluidic circuit element may be made from a plastic material having a contact angle of 90 degrees or less. The microfluidic circuit element is particularly useful when filling a liquid sample to the channel which is empty or filled with air and shows greatly improved a storage stability.