A device and method of forming the device that includes a first substrate having a cavity on a bottom surface of the first substrate and MEMS components formed on the first substrate and in the cavity; a second substrate having an upper surface; a first metal bond that extends around a perimeter of the cavity and forming a first connection between the bottom surface of first substrate and the upper surface of the second substrate; a second metal bond that extends around a perimeter of the first metal bond and spaced from the first metal bond, the second metal bond forming a second connection between the bottom surface of the first substrate and the upper surface of the second substrate; where the MEMS components are hermetically sealed between the first and second substrates. A getter agent can be between the first and second metal bonds.

An example method includes providing a working stack having a first substrate layer, a second substrate layer, and a radiation-absorbing material disposed between the first and second substrate layers. The working stack includes a cavity therein having a designated liquid. A bonding interface is defined between the radiation-absorbing material and at least one of the first substrate layer or the second substrate layer. The bonding interface has a film of the designated liquid. The method also includes directing radiation onto the bonding interface to form a perimeter seal. The perimeter seal separates the cavity from an outer area of the bonding interface. The method also includes directing the radiation onto the outer area of the bonding interface to secure the first and second substrate layers together. The perimeter seal impedes an ingress of bubbles from the outer area into the cavity as the radiation is directed onto the outer area.

A method of bonding layers of dielectric materials includes providing a surface one of the layers with microscale- and/or nanoscale-size bonding elements forming contact points of the layers and bringing a layer of the layers into a mutual position according to an intended use. The method also includes illuminating the layer whose surface is provided with bonding elements by an incident electromagnetic wave, the propagation direction of which is substantially orthogonal to the one of the layers, and whose wavelength is selected depending on an absorption spectrum of a material forming the one of the layers and generating condensed optical beams within said bonding elements or close to a tip of said bonding elements intended to be in contact with the other layer. The method further includes heating and melting the bonding elements by high-intensity focal spots formed by said generated optical beams and maintaining the layers into a mutual position until and bonding of the layers.

A method for manufacturing a protective wafer including a frame wafer and an optical window, and to a method for manufacturing a micromechanical device including such a protective wafer having an inclined optical window. Also described are a protective wafer including a frame wafer and an optical window, and a micromechanical device including a MEMS wafer and such a protective wafer, which delimit a cavity, the protective wafer including an inclined optical window.

A semiconductor package including a semiconductor die and at least one bondline positioned on the semiconductor die, the at least one bondline comprising a nickel lanthanide alloy diffusion barrier layer abutting a gold layer.

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

A ring-like sealing frame (3) and a bump (4) are simultaneously formed on a main surface of a first substrate (1) by patterning a metal paste. A ring-like protrusion (8) having a smaller width than a width of the sealing frame (3) is formed on a main surface of a second substrate (5). The main surface of the first substrate (1) and the main surface of the second substrate (5) are aligned to face each other. The sealing flame (3) is bonded to the protrusion (8), and the bump (4) is electrically bonded to the second substrate (5). A height of the protrusion (8) is 0.4 to 0.7 times a distance between the first substrate (1) and the second substrate (2) after bonding.

A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

A microelectromechanical system (MEMS) ambient pressure and acoustic sensor including an enclosure having an enclosure wall that defines an interior chamber and an acoustic input opening to the interior chamber, a moving structure positioned within the interior chamber and being acoustically coupled to the acoustic input opening. The moving structure having an acoustic sensing portion that is movable in response to an acoustic pressure input and an ambient pressure sensing portion that is movable in response to an ambient pressure input. The sensor further including a circuit electrically coupled to the moving structure and that is operable to determine an acoustic output and an ambient pressure output based on a movement of the moving structure.

Disclosed is method of manufacturing a microchannel chip by joining together a resin channel substrate having microchannels formed on at least one side thereof and a resin lid substrate, the method including: a step (A) wherein surface modification treatment is applied on joining surfaces of the channel substrate and the lid substrate; and a step (B) wherein, after the step (A), the joining surfaces of the channel substrate and the lid substrate are mated and the channel substrate and the lid substrate are pressurized under heating via a fluid or an elastic body having a durometer hardness of E20 or less.