A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

A method of forming an ultrasonic transducer device includes forming a patterned metal electrode layer over a substrate, the patterned metal electrode layer comprising a lower layer and an upper layer formed on the lower layer; forming an insulation layer over the patterned metal electrode layer; and planarizing the insulation layer to the upper layer of the patterned metal electrode layer, wherein the upper layer comprises a electrically conductive material that serves as a chemical mechanical polishing (CMP) stop layer that has CMP selectivity with respect to the insulation layer and the lower layer, and wherein the upper layer has a CMP removal rate slower than that of the insulation layer.

An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

A complementary metal-oxide-semiconductor (CMOS) micro electro-mechanical system (MEMS) microphone and a method for fabricating the same are disclosed. Firstly, a CMOS device including a semiconductor substrate, a first oxide insulation layer, a doped polysilicon layer, a second oxide insulation layer, a patterned polysilicon layer, and a metal wiring layer from bottom to top. The metal wiring layer is formed on the second oxide insulation layer. The patterned polysilicon layer includes undoped polysilicon. Then, a part of the metal wiring layer is removed to form a metal electrode and the semiconductor substrate is penetrated to have a chamber and expose the first oxide insulation layer, thereby forming a MEMS microphone.

Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

A micro structure with a substrate having a top surface; a first electrode with a horizontal orientation parallel to the top surface of the substrate, wherein the first electrode is embedded within the substrate so that a top surface of the first electrode coincides with the top surface of the substrate; a dielectric layer arranged on the top surface of the first electrode; and a second electrode arranged above the dielectric layer.

A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.