A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.

This application describes methods and apparatus relating to packaging of MEMS transducers and to MEMS transducer packages. The application describes a MEMS transducer package (300) having a first integrated circuit die (200) which has an integrated MEMS transducer (202) and integrated electronic circuitry (203) for operation of the MEMS transducer. The package is arranged such that the footprint of the MEMS transducer package is substantially the same size as the footprint of the integrated circuit die. At least part of the first integrated circuit die (200) may form a sidewall of the package. The package may be formed by a first package cover (302) which overlies the MEMS transducer and a second package cover (301) on the other side of the first integrated circuit die.

An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity through a via formed into the membrane layer.

A static random access memory (SRAM) device is provided in accordance with some embodiments. The SRAM device comprises a plurality of two-port SRAM arrays, which comprise a plurality of two-port SRAM cells. Each two-port SRAM cell comprises a write port portion, a read port portion, a first plurality of metal lines located in a first metal layer, a second plurality of metal lines located in a second metal layer, a third plurality of metal lines located in a third metal layer a plurality of edge cells, a plurality of well strap cells, and a plurality of jumper structures. Each jumper structure comprises first, second, and third metal landing pads located in the second metal layer and electrically connecting metal lines of the first and third metal layers.

This application describes methods and apparatus relating to packaging of MEMS transducers and to MEMS transducer packages. The application describes a MEMS transducer package (300) having a first integrated circuit die (200) which has an integrated MEMS transducer (202) and integrated electronic circuitry (203) for operation of the MEMS transducer. The package is arranged such that the footprint of the MEMS transducer package is substantially the same size as the footprint of the integrated circuit die. At least part of the first integrated circuit die (200) may form a sidewall of the package. The package may be formed by a first package cover (302) which overlies the MEMS transducer and a second package cover (301) on the other side of the first integrated circuit die.

An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.