B81C2203/075

Arched membrane structure for MEMS device

A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.

OSCILLATION FREQUENCY MEASURING SYSTEM AND METHOD FOR A MEMS SENSOR
20170297910 · 2017-10-19 ·

A MEMS sensor has at least a movable element designed to oscillate at an oscillation frequency, and an integrated measuring system coupled to the movable element to provide a measure of the oscillation frequency. The measuring system has a light source to emit a light beam towards the movable element and a light detector to receive the light beam reflected back from the movable element, including a semiconductor photodiode array. In particular, the light detector is an integrated photomultiplier having an array of single photon avalanche diodes.

SELF-POWERED PIEZOELECTRIC ENERGY HARVESTING MICROSYSTEM
20170288576 · 2017-10-05 ·

A self-powered piezoelectric energy harvesting microsystem device has CMOS integrated circuit elements, contacts and interconnections formed at a proof mass portion of a die region of a semiconductor wafer. Piezoelectric energy harvesting unit components connected to the integrated circuit elements are formed at a thinned beam portion of the die region that connects the proof mass portion for vibration relative to a surrounding anchor frame portion. A battery provided on the proof mass portion connects to the integrated circuit elements. In a cantilever architectural example, the battery is advantageously located at a distal end of the proof mass portion, opposite the joinder with frame portion via the beam portion.

Self-powered piezoelectric energy harvesting microsystem

A self-powered piezoelectric energy harvesting microsystem device has CMOS integrated circuit elements, contacts and interconnections formed at a proof mass portion of a die region of a semiconductor wafer. Piezoelectric energy harvesting unit components connected to the integrated circuit elements are formed at a thinned beam portion of the die region that connects the proof mass portion for vibration relative to a surrounding anchor frame portion. A battery provided on the proof mass portion connects to the integrated circuit elements. In a cantilever architectural example, the battery is advantageously located at a distal end of the proof mass portion, opposite the joinder with frame portion via the beam portion.

MEMS device with constant capacitance

A MEMS apparatus has a substrate, an input node, an output node, and a MEMS switch between the input node and the output node. The switch selectively connects the input node and the output node, which are electrically isolated when the switch is open. The apparatus also has an input doped region in the substrate and an output doped region in the substrate. The input doped region and output doped region are electrically isolated through the substratei.e., the resistance between them inhibits non-negligible current flows between the two doped regions. The input doped region forms an input capacitance with the input node, while the output doped region forms an output capacitance with the output node.

Transducer, and manufacturing method of the transducer
09564836 · 2017-02-07 ·

A transducer, and a method for manufacturing the transducer are provided. The transducer includes a substrate-side electrode provided in one side of an insulative substrate and an opposite plate including an opposite electrode disposed opposite to the substrate-side electrode, and which performs a function such as a reduction in impedance, conversion of capacitance, signal amplification, thereby achieving size reduction of the transducer itself. An upper plate is made of a silicon monocrystal and is arranged so as to face a substrate-side electrode. In the upper plate, an integrated circuit section which is an impurity region of an IC circuit is formed by a thermal diffusion method or an ion implantation method. By this transducer, an improvement in conversion efficiency, an improvement in productivity, and a size reduction of a mount system are achieved.