A compound sensor device includes a semiconductor substrate having an active electronic circuit formed in or on the semiconductor substrate. A sensor including a sensor substrate including a sensor circuit having an environmental sensor or actuator formed in or on the sensor substrate is micro-transfer printed onto the semiconductor substrate. One or more electrical conductors electrically connect the active electronic circuit to the sensor circuit. The semiconductor substrate includes a first material and the sensor substrate includes a second material different from the first material.

A semiconductor device package includes a semiconductor device, a non-semiconductor substrate over the semiconductor device, and a first connection element extending from the semiconductor device to the non-semiconductor substrate and electrically connecting the semiconductor device to the non-semiconductor substrate.

The present application relates to structures for supporting mechanical, electrical and/or electromechanical components, devices and/or systems and to methods of fabricating such structures. The application describes a primary die comprising an aperture extending through the die. The aperture is suitable for receiving a secondary die. A secondary die may be provided within the aperture of the primary die.

A micromechanical sensor device and a corresponding manufacturing method are described. The micromechanical sensor device is fitted with a substrate including a front side and a rear side; a micromechanical sensor chip including a sensor area attached to the front side of the substrate; and a capping unit attached to the front side of the substrate, which is formed at least partially by an ASIC chip. The capping unit surrounds the micromechanical sensor chip in such a way that a cavity closed toward the front side of the substrate is formed between the sensor area of the micromechanical sensor chip and the ASIC chip. A mold package is formed above the capping unit.

A semiconductor arrangement and methods of formation are provided. The semiconductor arrangement includes a micro-electro mechanical system (MEMS). A via opening is formed through a substrate, first dielectric layer and a first plug of the MEMS. The first plug comprises a first material, where the first material has an etch selectivity different than an etch selectivity of the first dielectric layer. The different etch selectivity of first plug allows the via opening to be formed relatively quickly and with a relatively high aspect ratio and desired a profile, as compared to forming the via opening without using the first plug.

A method for manufacturing a microelectromechanical systems (MEMS) structure with sacrificial supports to prevent stiction is provided. A first etch is performed into an upper surface of a carrier substrate to form a sacrificial support in a cavity. A thermal oxidation process is performed to oxidize the sacrificial support, and to form an oxide layer lining the upper surface and including the oxidized sacrificial support. A MEMS substrate is bonded to the carrier substrate over the carrier substrate and through the oxide layer. A second etch is performed into the MEMS substrate to form a movable mass overlying the cavity and supported by the oxidized sacrificial support. A third etch is performed into the oxide layer to laterally etch the oxidized sacrificial support and to remove the oxidized sacrificial support. A MEMS structure with anti-stiction bumps is also provided.

A semiconductor package includes a first die having a first surface, a first conductive bump over the first surface and having first height and a first width, a second conductive bump over the first surface and having a second height and a second width. The first width is greater than the second width and the first height is substantially identical to the second height. A method for manufacturing the semiconductor package is also provided.

Microelectromechanical systems (MEMS) packages and methods of manufacture thereof are described. In an embodiment, a method of manufacturing a MEMS package may include attaching a MEMS structure having a capping structure thereon to a device wafer comprising a plurality of first devices formed therein to form a wafer level MEMS package; and singulating the device wafer having the MEMS structure attached thereto to form a plurality of chip scale MEMS packages.

A semiconductor package structure includes a substrate; a first die on the substrate, wherein an active surface of the first die is facing away from the substrate; a second die on the active surface of the first die, electrically connected to the first die through a plurality of conductive terminals; and a sealing structure on the active surface of the first die, surrounding the plurality of conductive terminals and abutting the second die thereby forming a cavity between the first die and the second die. A method for manufacturing the semiconductor package structure is also provided.

A method of forming a micro electro mechanical system (MEMS) assembly comprises providing a substrate having an electrically conductive layer disposed thereon. The method also comprises depositing, on the substrate over the electrically conductive layer, a bonding material having an elastic modulus of less than 500 MPa so as to form a bond layer. The bond layer is completely cured, and a MEMS die is attached to the completely cured bond layer.