A method of forming a capacitive micromachined ultrasonic transducer (CMUT) device includes bonding a CMUT substrate to a silicon on insulator (SOI) substrate. The CMUT substrate has a first thickness and the SOI substrate includes a handle, a buried oxide layer, and a device layer. At least one of the CMUT substrate or the SOI substrate includes a patterned dielectric layer. The device layer is bonded to the patterned dielectric layer to form a plurality of sealed cavities and the device layer forms a diaphragm of the plurality of cavities. The method further includes reducing the first thickness of the CMUT substrate to a second thickness and forming a plurality of through-silicon vias from a second surface of the CMUT substrate opposite the first surface.

A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

This disclosure provides devices and methods for 3-D device packaging with backside interconnections. One or more device elements can be hermetically sealed from an ambient environment, such as by vacuum lamination and bonding. One or more via connections provide electrical interconnection from a device element to a back side of a device substrate, and provide electrical interconnection from the device substrate to external circuitry on the back side of the device. The external circuitry can include a printed circuit board or flex circuit. In some implementations, an electrically conductive pad is provided on the back side, which is electrically connected to at least one of the via connections. In some implementations, the one or more via connections are electrically connected to one or more electrical components or interconnections, such as a TFT or a routing line.

A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes MEMS dies (200) and a device wafer (100), wherein the device wafer (100) is provided with a control unit and an interconnection structure (300); a first bonding face (100a) of the device wafer (100) is provided with first contact pads (410) and an input and output connection member (420); the MEMS dies (200) are arranged side by side on the first bonding face (100a) by a bonding layer (500); the MEMS die (200) has a micro-cavity (210) and a second contact pad (220); the micro-cavity (210) of the MEMS die (200) has a through hole (210a) in communication with the outside; the first contact pad (410) is electrically connected to the corresponding second contact pad (220); and the bonding layer (500) has an opening (510) exposing the input and output connection member (420). According to the MEMS package structure, the size of the package structure can be reduced with respect to an existing integration method; and various MEMS dies can be integrated on the same device wafer, and thus, a function integration capability of the package structure can also be improved.

A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (210,220) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) is formed on a first surface (100a) of the device wafer. The MEMS die (210,220) includes a closed micro-cavity (221), a second contact pad (201) configured to be coupled to an external electrical signal, and a bonding surface (200a,220a). The MEMS die (210,220) is bonded to the first surface (100a) by a bonding layer (500), in which an opening (510) is formed. The first contact pad (410) is electrically connected to the second contact pad (201), and a rewiring layer (700) is arranged on a surface opposing the first surface (100a). The MEMS package structure allows electrical interconnection between the MEMS die and the device wafer with a reduced package size, compared to those produced by existing integration techniques. In addition, a plurality of MEMS dies of the same or different structures and functions are allowed to be integrated on the same device wafer.

A micro-electro-mechanical system (MEMS) package structure and a method for fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (200) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) and an input-output connecting member (420) are formed on a first bonding surface (100a) of the device wafer (100). The MEMS die (200) is coupled to the first bonding surface (100a) through a bonding layer (500). The MEMS die (200) includes a closed micro-cavity (220) and a second contact pad (220). The first contact pad (410) is electrically connected to a corresponding second contact pad (220). An opening (510) that exposes the input-output connecting member (420) is formed in the bonding layer (500). The MEMS package structure allows electrical interconnection between the MEMS die (200) and the device wafer (100) with a reduced package size, compared to those produced by existing integration techniques. In addition, function integration ability of the package structure is improved by integrating a plurality of MEMS dies of the same or different structures and functions on the same device wafer.

A MEMS package structure and a method for manufacturing same. The MEMS package structure comprises a MEMS die (200) and a device wafer (100). The MEMS die (200) has micro-cavities (211, 221) and contact pads (212, 222) configured to be coupled to an external electrical signal. The micro-cavity (221) of the MEMS die (200) has an opening (221a) in communication with the outside. The device wafer (100) is provided therein with a control unit corresponding to the MEMS die (200). An interconnection structure (300) is provided in the device wafer (100) and is electrically connected to each of the contact pads (212, 222) and the control unit. A rewiring layer (400) electrically connected to the interconnection structure (300) is provided on a second surface of the device wafer (100). The provision of the MEMS die (200) and the rewiring layer (400) respectively on both sides of the device wafer is conductive to reducing the size of the MEMS package structure; various MEMS dies can be integrated on one device wafer, thereby meeting the requirements for the function integration capability of the MEMS package structure in practical application.

A waterproofed environmental sensing device with water detection provisions includes an environmental sensor to sense one or more environmental properties. The device further includes an electronic integrated circuit implemented on a substrate and coupled to the environmental sensor via a wire bonding. An air-permeable cap structure is formed over the environmental sensor, and a protective layer is formed over the wire bonding to protect the wire bonding against damage.

A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

Various embodiments of the present disclosure are directed towards a method for manufacturing an integrated chip, the method comprises forming an interconnect structure over a semiconductor substrate. An upper dielectric layer is formed over the interconnect structure. An outgas layer is formed within the upper dielectric layer. The outgas layer comprises a first material that is amorphous. A microelectromechanical systems (MEMS) substrate is formed over the interconnect structure. The MEMS substrate comprises a moveable structure directly over the outgas layer.