A method for manufacturing a MEMS structure is provided. The method includes providing a MEMS substrate having a first surface, forming a first buffer layer on the first surface of the MEMS substrate, and forming a first roughening layer on the first buffer layer. Also, a MEMS structure is provided. The MEMS structure includes a MEMS substrate, a first buffer layer, a first roughening layer, and a CMOS substrate. The MEMS substrate has a first surface and a pillar is on the first surface. The first buffer layer is on the first surface. The first roughening layer is on the first buffer layer. The CMOS substrate has a second surface and is bonded to the MEMS substrate via the pillar. Moreover, an air gap is between the first roughening layer and the second surface of the CMOS substrate.

Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.

A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.

A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.

Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.

Provided is a sensor package with an integrated circuit embedded in a substrate and a sensor die on the substrate. The substrate includes a molding compound that has additives configured to respond to a laser. The integrated circuit is embedded in the molding compound. An opening is through the substrate and is aligned with the sensor die. A lid covers the sensor die and the substrate, forming a cavity. At least one trace is formed on a first surface of the substrate, on an internal sidewall of the opening and on a second surface of the substrate with a laser direct structuring process.

A semiconductor device and method of manufacturing the device that includes a capacitive micromachined ultrasonic transducer (CMUT). The CMUT includes an integrated circuit substrate, and a sensing electrode positioned on the integrated substrate. The sensing electrode includes a sidewall that forms a wall of an isolation trench adjacent to the sensing electrode, and is patterned before covering dielectric layers are deposited. After patterning of the sensing electrode, one or more dielectric layers are patterned, with one dielectric layer patterned on the sensing electrode and sidewall, and which has a thickness corresponding to the surface roughness of the sensing electrode. The CMUT further includes a membrane positioned above the sensing electrode forming a cavity therein.

The present disclosure relates to a micro-electromechanical system (MEMS) structure including one or more semiconductor devices arranged on or within a first substrate and a MEMS substrate having an ambulatory element. The MEMS substrate is connected to the first substrate by a conductive bonding structure. A capping substrate is arranged on the MEMs substrate. The capping substrate includes a semiconductor material that is separated from the first substrate by the MEMS substrate. One or more conductive polysilicon vias include a polysilicon material that continuously extends from the conductive bonding structure, completely through the MEMS substrate, and to within the capping substrate. The semiconductor material of the capping substrate covers opposing sidewalls of the polysilicon material and an upper surface of the polysilicon material that is between the opposing sidewalls.

The present invention relates to the field of medical devices, and specifically to a packaging structure and a packaging method for a retinal prosthesis implanted chip, including a high-density stimulation electrode component processed by a glass substrate, wherein the stimulation electrode component comprises the glass substrate, and a plurality of stimulation electrodes and a pad structure provided on the glass substrate; the stimulation electrodes are formed through cutting out metal pins on the metal and then pouring with glass; the stimulation electrode component is connected to an ASIC chip; a glass packaging cover is covered on the ASIC chip, the glass packaging cover is provided with a metal feedthrough structure for communicating with the stimulation chip; and the packaging cover covers and encapsulates the pad structure. In the packaging structure of the present invention, the substrate and the packaging cover are both made of a glass material, and thereby enable manufacture of a high-density stimulation electrode array, and the metal feedthrough structure is directly used on the glass cover, which facilitates wiring and achieves good sealing performance of the package cover.

An ultrasound device for use with various types of imaging. In some embodiments, the ultrasound device may comprise a circuitry substrate and a plurality of transducer chips coupled to the circuitry substrate. In some embodiments, each transducer chip may comprise a microelectromechanical systems (MEMS) component that may include a plurality of ultrasound elements closely packed with one another, an Application-Specific Integrated Circuit (ASIC) that may be operatively coupled to the plurality of ultrasound elements of said MEMS component, and a control unit that may be electrically coupled to each ASIC of the plurality of transducer chips for control thereof. In some embodiments, at least two transducer chips of the plurality of transducer chips may be placed on the circuitry substrate with a separation distance that may be less than an operational wavelength of the ultrasound elements of the MEMS components of said at least two transducer chips.